Polythiophenes as emitter layers for crystalline silicon solar cells
- We investigated the influence of the emitter (amorphous-Si, a-Si, or polythiophene derivatives: poly(3-hexylthiophene), P3HT, and poly(3-[3,6-dioxaheptyl]-thiophene), P3DOT) and the interface passivation (intrinsic a-Si or SiOX and methyl groups or SiOX) on the c-Si based 1 × 1 cm2 planar hybrid heterojunction solar cell parameters. We observed higher short circuit currents for the P3HT or P3DOT/c-Si solar cells than those obtained for a-Si/c-Si devices, independent of the interface passivation. The obtained VOC of 659 mV for the P3DOT/SiOX/c-Si heterojunction solar cell with hydrophilic 3,6-dioxaheptyl side chains is among the highest reported for c-Si/polythiophene devices. The maximum power conversion efficiency, PCE, was 11% for the P3DOT/SiOX/c-Si heterojunction solar cell. Additionally, our wafer lifetime measurements reveal a field effect passivation in the wafer induced by the polythiophenes when deposited on c-Si.
| Author details: | M. Zellmeier, Thomas J. K. Brenner, Silvia JanietzORCiDGND, N. H. Nickel, J. Rappich |
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| DOI: | https://doi.org/10.1063/1.5006625 |
| ISSN: | 0021-8979 |
| ISSN: | 1089-7550 |
| Title of parent work (English): | Journal of applied physics |
| Subtitle (English): | parasitic absorption, interface passivation, and open circuit voltage |
| Publisher: | American Institute of Physics |
| Place of publishing: | Melville |
| Publication type: | Article |
| Language: | English |
| Date of first publication: | 2018/01/16 |
| Publication year: | 2018 |
| Release date: | 2022/02/11 |
| Volume: | 123 |
| Issue: | 3 |
| Number of pages: | 5 |
| Funding institution: | Helmholtz Energy-Alliance |
| Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
| DDC classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
| Peer review: | Referiert |
