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We investigated the influence of the emitter (amorphous-Si, a-Si, or polythiophene derivatives: poly(3-hexylthiophene), P3HT, and poly(3-[3,6-dioxaheptyl]-thiophene), P3DOT) and the interface passivation (intrinsic a-Si or SiOX and methyl groups or SiOX) on the c-Si based 1 × 1 cm2 planar hybrid heterojunction solar cell parameters. We observed higher short circuit currents for the P3HT or P3DOT/c-Si solar cells than those obtained for a-Si/c-Si devices, independent of the interface passivation. The obtained VOC of 659 mV for the P3DOT/SiOX/c-Si heterojunction solar cell with hydrophilic 3,6-dioxaheptyl side chains is among the highest reported for c-Si/polythiophene devices. The maximum power conversion efficiency, PCE, was 11% for the P3DOT/SiOX/c-Si heterojunction solar cell. Additionally, our wafer lifetime measurements reveal a field effect passivation in the wafer induced by the polythiophenes when deposited on c-Si.
The electrochemical behaviour of new amphiphilic 1,3,4-oxadiazoles were studied by cyclic voltammetry. The influence of the supra- molecular structure on the redox behaviour in liquid or solid solutions, in Langmuir-Blodgett multilayers, and in amorphous films is investigated in detail. The reversible reduction of amphiphilic 2,5-diarylene- 1,3,4-oxadiazoles is significantly influenced by substituents in the para position of the phenylene ring. In the solid states the reduction peak potentials are shifted to more negative values compared to data measured in solution. This shift increases as the film thickness is increased. An influence of the supramolecular order in the solid films was not found. In-situ UV-vis spectroelectrochemistry of LB-multilayers deposited onto indium tin oxide (ITO) glass give evidence for the formation of radical anions in the highly ordered layer.