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- Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) (1)
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Institute
Investigation of the chain-chain interface in a lead-stearate multilayer using neutron reflectivity
(1995)
The thermal treatment of Y-type Langmuir-Blodgett (LB) films formed from the amphiphilic derivative of 2,5- diphenyl-1,3,4-oxadiazole 1 results in changes of the molecular packing. These changes have been analysed by a combination of X-ray specular reflectivity data, X-ray grazing incidence diffraction data and scanning force microscopy images, On the basis of these experimental data we have simulated possible supramolecular structures, These simulations provide insight into the intermolecular interactions giving rise to the observed structural transitions. The crystalline structure induced by thermal treatment of the LB films is characterized by a uniaxial texture, which is correlated with the dipping direction during deposition of the LB film.
The molecular in-plane structure of uranyl arachidate Langmuir-Blodgett (LB) films formed at different subphase pH values was analysed by means of X-ray grazing-incidence diffraction. For multilayers formed at low subphase pH a reorganisation of the arachidic acid film structure is confirmed. At appropriate subphase pH values, reorganisation of the film structure, e.g. via the formation of three-dimensional crystallites, is prevented by the presence of the uranyl ions and by the subsequent introduction of conformational disorder (gauche defects) in the alkyl chains. The observation of a macroscopic flow-induced in-plane texture in these uranyl arachidate LB films has profound implications for the design of ordered, supramolecular structures by the Langmuir-Blodgett technique.
Thermally induced rearrangement of fatty acid salt molecules in Langmuir-Blodgett multilayers
(1997)
Characterization of InGaAs single quantum wells buried in GaAs[001] by grazing incidence diffraction
(1997)
In-plane strain and strain relaxation in laterally patterned Si/SiGe quantum dots and wire arrays
(1998)
Investigation of molecular diffusion across organic multilayers using neutron specular reflectivity
(1999)
Si(1-x)Ge(x) laterally graded crystals as monochromators for X-Ray absorption spectroscopy studies
(1999)
Investigations of semiconductor surfaces and interfaces by X-ray grazing incidence diffraction
(2000)
In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction
(2000)
Dielectric loss spectroscopy (DLS) was performed at compact samples and lamellary organized Langmuir-Blodgett (LB) films from various fatty acid salts. Previous thermoanalytical measurements at compact samples revealed the appearance of two different phase transition temperatures; the lower one is related to the acid the second one to the acid salt molecules. In spite of ill defined electrical contacts with the film the characteristic DLS frequencies obtained from about 100nm thick multilayer films are similar to those recorded from bulk samples. No significant variations of frequencies were found changing the counter ions. Besides conductivity influence at low frequncies we found two relaxations related to the mobility of the dipolar carboxylat-metal group at about 100 and 10000Hz. One of these frequencies is related to the rotation around the chain axis. The strength of this relaxation increases significantly with increasing the sample temperature above 105°C. This temperature is connected with a structural phase transition observed by X-ray reflectometry. In case of Pb-stearate the results of the dielectric measurements help to interprete this structural change as a transition from an orthorhombic into a free-rotator phase. The uncorrelated rotation of molecules around their molecular axes initiates a much increased relaxation strength at the carboxylat-metal sites.
Strain induced compositional modulations in AlGaAs overlayers induced by lateral surface gratings
(2001)
Atomic force microscopy inspection of the early state of formation of polymer surface relief grating
(2001)
Formation of a buried density grating on thermal erasure of azobenzene polymer surface gratings
(2002)
Thin Layers of columns of an amphiphilic hexa-peri-hexabenzocoronene at silicon wafer surfaces
(2003)
Results of energy-dispersive x-ray reflectivity and grazing incidence diffraction studies of Langmuir-Blodgett films exhibited evolution of conventional three-dimensional melting from continuous melting, characteristic of two- dimensional systems, as a function of deposited monolayers. Continuous expansion followed by a sharp phase transition of the in-plane lattice was observed before the melting point and found to be independent of number of deposited layers. Evolution of conventional melting with an increase in the number of monolayers could be quantified by measuring stiffness against tilting of the vertical stack of molecules, which are kept together by an internal field. The internal field as defined in this model reduces as the in-plane lattice expands and the sample temperature approaches melting point. The sharpness of the melting transition, which has been approximated by a Langevin function, increases with the number of deposited monolayers
Ab initio calculations have been carried out using the FP-APW+lo method in order to understand the atomic origin of the inverse piezoelectric effect in x-quartz. The external electric field was modelled by a saw-like potential V-ext in order to achieve translational symmetry within a supercell (SC) containing 72 atoms. The original trigonal quartz structure was repeated along the [110] direction, which corresponds to the direction of the external field. An electric field with 550 kV/mm was applied and the atomic positions of the SC were relaxed until the forces acting on the atoms vanished. In parts of the SC, V-ext changes almost linearly and thus the relaxed atomic positions can be used to determine the structural response due to the external electric field. The calculations provide the piezoelectric modulus of the correct order of magnitude. In contrast to previous models and in agreement with recent experimental results, the atomic origin of the piezoelectric effect can be described by a rotation of slightly deformed SiO4 tetrahedra against each other. The change of the Si-O bond lengths and the tetrahedral O-Si-O angles is one order of magnitude smaller than that of the Si-O-Si angles between neighbouring tetrahedra. The calculated changes of X-ray structure factors are in agreement with experiment when the theoretical data are extrapolated down to the much smaller field strength that is applied in the experiment (E < 10 kV/mm). (C) 2004 Elsevier Ltd. All rights reserved
Surface relief gratings on azobenzene containing polymer films were prepared under irradiation by actinic light. Finite element modeling of the inscription process was carried out using linear viscoelastic analysis. It was assumed that under illumination the polymer film undergoes considerable plastification, which reduces its original Young's modulus by at least three orders of magnitude. Force densities of about 10(11) N/m(3) were necessary to reproduce the growth of the surface relief grating. It was shown that at large deformations the force of surface tension becomes comparable to the inscription force and therefore plays an essential role in the retardation of the inscription process. In addition to surface profiling the gradual development of an accompanying density grating was predicted for the regime of continuous exposure. Surface grating development under pulselike exposure cannot be explained in the frame of an incompressible fluid model. However, it was easily reproduced using the viscoelastic model with finite compressibility. (C) 2004 American Institute of Physics
We report a white beam x-ray waveguide (WG) experiment. A resonant beam coupler x-ray waveguide (RBC) is used simultaneously as a broad bandpass (or multibandpass) monochromator and as a beam compressor. We show that, depending on the geometrical properties of the WG, the exiting beam consists of a defined number of wavelengths which can be shifted by changing the angle of incidence of the white x-ray synchrotron beam. The characteristic far-field pattern is recorded as a function of exit angle and energy. This x-ray optical setup may be used to enhance the intensity of coherent x-ray WG beams since the full energetic acceptance of the WG mode is transmitted. (C) 2004 American Institute of Physics
Sinusoidally shaped surface relief gratings made of polymer films containing, azobenzene moieties can be created by holographic illumination with laser light of about lambda approximate to 500 nm. The remarkable material transport takes place at temperatures far (100 K) below the glass transition temperature of the material. As probed by visible light scattering the efficiency of grating formation crucially depends on the polarization state of the laser light and is maximal when circular polarization is used. In contrast to VIS light scattering X-ray diffraction is most sensitive for periodic surface undulations with amplitudes below 10 nm. Thus, combined in-situ X-ray and visible light scattering at CHESS were used to investigate the dynamics of surface relief grating formations upon laser illumination. The time development of grating peaks up to 9th order at laser power of P = 20 mW/cm(2) could be investigated, even the onset of grating formation as a function of light polarization. A linear growth of grating amplitude was observed for all polarizations. The growth velocity is maximal using circularly polarized light but very small for s-polarized light
The molecular orientation of azobenzene side groups in polymer films before (nonpatterned) and after (patterned) development of a surface relief grating has been investigated by photoelectron spectroscopy using synchrotron radiation. The photoemission spectra obtained for 60-100 eV photons of a patterned and a nonpatterned surface are similar when the polarization vector of the synchrotron light is parallel to the grating vector. However, for perpendicular excitation, considerable spectral intensity differences can be observed for 9-14 eV electron binding energy. The observed changes are attributed to the formation of well-oriented azobenzenes at the surface. (C) 2004 American Institute of Physics
Ion-beam-induced ripple formation in Si wafers was studied by two complementary surface sensitive techniques, namely atomic force microscopy (AFM) and depth-resolved x-ray grazing incidence diffraction (GID). The formation of ripple structure at high doses (similar to7x10(17) ions/cm(2)), starting from initiation at low doses (similar to1x10(17) ions/cm(2)) of ion beam, is evident from AFM, while that in the buried crystalline region below a partially crystalline top layer is evident from GID study. Such ripple structure of crystalline layers in a large area formed in the subsurface region of Si wafers is probed through a nondestructive technique. The GID technique reveals that these periodically modulated wavelike buried crystalline features become highly regular and strongly correlated as one increases the Ar ion-beam energy from 60 to 100 keV. The vertical density profile obtained from the analysis of a Vineyard profile shows that the density in the upper top part of ripples is decreased to about 15% of the crystalline density. The partially crystalline top layer at low dose transforms to a completely amorphous layer for high doses, and the top morphology was found to be conformal with the underlying crystalline ripple