• search hit 4 of 13
Back to Result List

Photodriven transient picosecond top-layer semiconductor to metal phase-transition in p-doped molybdenum disulfide

  • Visible light is shown to create a transient metallic S-Mo-S surface layer on bulk semiconducting p-doped indirect-bandgap 2H-MoS2. Optically created electron-hole pairs separate in the surface band bending region of the p-doped semiconducting crystal causing a transient accumulation of electrons in the surface region. This triggers a reversible 2H-semiconductor to 1T-metal phase-transition of the surface layer. Electron-phonon coupling of the indirect-bandgap p-doped 2H-MoS2 enables this efficient pathway even at a low density of excited electrons with a distinct optical excitation threshold and saturation behavior. This mechanism needs to be taken into consideration when describing the surface properties of illuminated p-doped 2H-MoS2. In particular, light-induced increased charge mobility and surface activation can cause and enhance the photocatalytic and photoassisted electrochemical hydrogen evolution reaction of water on 2H-MoS2. Generally, it opens up for a way to control not only the surface of p-doped 2H-MoS2 but also relatedVisible light is shown to create a transient metallic S-Mo-S surface layer on bulk semiconducting p-doped indirect-bandgap 2H-MoS2. Optically created electron-hole pairs separate in the surface band bending region of the p-doped semiconducting crystal causing a transient accumulation of electrons in the surface region. This triggers a reversible 2H-semiconductor to 1T-metal phase-transition of the surface layer. Electron-phonon coupling of the indirect-bandgap p-doped 2H-MoS2 enables this efficient pathway even at a low density of excited electrons with a distinct optical excitation threshold and saturation behavior. This mechanism needs to be taken into consideration when describing the surface properties of illuminated p-doped 2H-MoS2. In particular, light-induced increased charge mobility and surface activation can cause and enhance the photocatalytic and photoassisted electrochemical hydrogen evolution reaction of water on 2H-MoS2. Generally, it opens up for a way to control not only the surface of p-doped 2H-MoS2 but also related dichalcogenides and layered systems. The findings are based on the sensitivity of time-resolved electron spectroscopy for chemical analysis with photon-energy-tuneable synchrotron radiation.show moreshow less

Export metadata

Additional Services

Search Google Scholar Statistics
Metadaten
Author details:Nomi SorgenfreiORCiDGND, Erika GiangrisostomiORCiD, Raphael Martin JayORCiDGND, Danilo KühnORCiDGND, Stefan NepplORCiDGND, Ruslan OvsyannikovORCiD, Hikmet SezenORCiD, Svante SvenssonORCiD, Alexander FöhlischORCiDGND
DOI:https://doi.org/10.1002/adma.202006957
ISSN:0935-9648
ISSN:1521-4095
Pubmed ID:https://pubmed.ncbi.nlm.nih.gov/33661532
Title of parent work (English):Advanced materials
Publisher:Wiley-VCH
Place of publishing:Weinheim
Publication type:Article
Language:English
Date of first publication:2021/03/04
Publication year:2021
Release date:2024/04/29
Tag:catalysis; dichalcogenides; hydrogen evolution reaction; phase transitions; photoelectron spectroscopy
Volume:33
Issue:14
Article number:2006957
Number of pages:8
Funding institution:FLAG-ERA Graphene Basic Research 2 2017 in project LaMeS DFGGerman Research Foundation (DFG) [400335214]; Carl Tryggers Foundation (CTS), Sweden; ERCEuropean Research Council (ERC)European Commission [669531 EDAX]; Projekt DEAL
Organizational units:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie
DDC classification:5 Naturwissenschaften und Mathematik / 54 Chemie / 540 Chemie und zugeordnete Wissenschaften
6 Technik, Medizin, angewandte Wissenschaften / 66 Chemische Verfahrenstechnik / 660 Chemische Verfahrenstechnik
Peer review:Referiert
Publishing method:Open Access / Hybrid Open-Access
License (German):License LogoCC-BY - Namensnennung 4.0 International
Accept ✔
This website uses technically necessary session cookies. By continuing to use the website, you agree to this. You can find our privacy policy here.