The angular- and crystal-momentum transfer through electron-phonon coupling in silicon and silicon-carbide: similarities and differences
- Electron-phonon scattering has been studied for silicon carbide (6H-SiC) with resonant inelastic x-ray scattering at the silicon 2p edge. The observed electron-phonon scattering yields a crystal momentum transfer rate per average phonon in 6H-SiC of 1.8 fs(-1) while it is 0.2 fs(-1) in crystalline silicon. The angular momentum transfer rate per average phonon for 6H-SiC is 0.1 fs(-1), which is much higher than 0.0035 fs(-1) obtained for crystalline silicon in a previous study. The higher electron-phonon scattering rates in 6H-SiC are a result of the larger electron localization at the silicon atoms in 6H-SiC as compared to crystalline silicon. While delocalized valence electrons can screen effectively (part of) the electron-phonon interaction, this effect is suppressed for 6H-SiC in comparison to crystalline silicon. Smaller contributions to the difference in electron-phonon scattering rates between 6H-SiC and silicon arise from the lower atomic mass of carbon versus silicon and the difference in local symmetry.
Author details: | P. S. Miedema, Martin BeyeORCiDGND, R. Koennecke, G. Schiwietz, Alexander FöhlischORCiDGND |
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DOI: | https://doi.org/10.1088/1367-2630/16/9/093056 |
ISSN: | 1367-2630 |
Title of parent work (English): | New journal of physics : the open-access journal for physics |
Publisher: | IOP Publ. Ltd. |
Place of publishing: | Bristol |
Publication type: | Article |
Language: | English |
Year of first publication: | 2014 |
Publication year: | 2014 |
Release date: | 2017/03/27 |
Tag: | 6H-SiC; RIXS; electron-phonon scattering |
Volume: | 16 |
Number of pages: | 17 |
Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
Peer review: | Referiert |
Publishing method: | Open Access |