Refine
Has Fulltext
- no (141)
Year of publication
Document Type
- Article (139)
- Monograph/Edited Volume (2)
Is part of the Bibliography
- yes (141)
Keywords
- Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) (1)
- Energy-dispersive Laue diffraction (1)
- Interaction of radiation with matter (1)
- Solid state detectors (1)
- X-ray imaging (1)
- X-ray spectroscopy (1)
- pnCCD (1)
Institute
- Institut für Physik und Astronomie (141) (remove)
Surface relief gratings were inscribed on azobenzene polymer films using a pulselike exposure of an Ar+ laser. The inscription process was initiated by a sequence of short pulses followed by much longer relaxation pauses. The development of the surface relief grating was probed by a He-Ne laser measuring the scattering intensity of the first- order grating peak. The growth time of the surface relief grating was found to be larger than the length of the pulses used. This unusual behavior can be considered as a nonlinear material response associated with the trans-cis isomerization of azobenzene moieties. In this study the polymer stress was assumed to be proportional to the number of cis-isomers. One-dimensional viscoelastic analysis was used to derive the polymer deformation. The rate of trans-cis isomerization increases with the intensity of the inscribing light; in the dark it is equal to the rate of thermal cis- trans isomerization. The respective relaxation times were estimated by fitting theoretical deformation curves to experimental data
In this work we study the response of a pnCCD by means of X-ray spectroscopy in the energy range between 6 key and 20 key and by Laue diffraction techniques. The analyses include measurements of characteristic detector parameters like energy resolution, count rate capability and effects of different gain settings. The limit of a single photon counting operation in white beam X-ray diffraction experiments is discussed with regard to the occurrence of pile-up events, for which the energy information about individual photons is lost. In case of monochromatic illumination the pnCCD can be used as a fast conventional CCD with a charge handling capacity (CHC) of about 300,000 electrons per pixel. If the CHC is exceeded, any surplus charge will spill to neighboring pixels perpendicular to the transfer direction due to electrostatic repulsion. The possibilities of increasing the number of storable electrons are investigated for different voltage settings by exposing a single pixel with X-rays generated by a microfocus X-ray source. The pixel binning mode is tested as an alternative approach that enables a pnCCD operation with significantly shorter readout times.
A crystal of hen egg-white lysozyme was analyzed by means of energy-dispersive X-ray Laue diffraction with white synchrotron radiation at 2.7 angstrom resolution using a pnCCD detector. From Laue spots measured in a single exposure of the arbitrarily oriented crystal, the lattice constants of the tetragonal unit cell could be extracted with an accuracy of about 2.5%. Scanning across the sample surface, Laue images with split reflections were recorded at various positions. The corresponding diffraction patterns were generated by two crystalline domains with a tilt of about 1 degrees relative to each other. The obtained results demonstrate the potential of the pnCCD for fast X-ray screening of crystals of macromolecules or proteins prior to conventional X-ray structure analysis. The described experiment can be automatized to quantitatively characterize imperfect single crystals or polycrystals.
We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a patterned stressor layer. The structure thus contains QW- and quantum-wire-like areas. At low excitation densities, photoluminescence (PL) transients from both areas are well described by a rate equation model for a three-level system with a saturable interlevel carrier transfer representing the lateral drift of carriers from the QW regions into the wires. Small-signal carrier lifetimes for QW, wires, and transfer time from QW to wire are 180, 190, and 28 ps, respectively. For high excitation densities the time constants of the observed transients increase, in agreement with the model. In addition, QW and wire PL lines merge indicating a smoothening of the potential difference, i.e., the effective carrier confinement caused by the stressor structure becomes weaker with increasing excitation. (c) 2005 American Institute of Physics
Si(1-x)Ge(x) laterally graded crystals as monochromators for X-Ray absorption spectroscopy studies
(1999)
Recently it has been shown that lateral carrier confinement in an InGaAs quantum well (QW) embedded in GaAs can be achieved by using a laterally patterned InGaP stressor layer on top of the heterostructure. To exploit this effect in a device the structure has to be planarized by a second epitaxial step. It has been shown that the lateral strain modulation almost vanishes after overgrowth with GaAs, whereas overgrowth with a single ternary layer of opposite strain compared to the stressor layer suffers from strain induced decomposition. Here we show that the lateral carrier confinement of the initially free standing nanostructure can almost be maintained using a two step process for overgrowth, where a strained thin ternary layer is grown first followed by GaAs up to complete planarization of the patterned structure. Thickness and composition of the ternary layer are adjusted on the basis of finite element calculations of the strain distribution (FEM). The strain field achieved after overgrowth is probed by X-ray grazing- incidence diffraction (GID). (c) 2005 Elsevier B.V. All rights reserved