Refine
Has Fulltext
- no (145)
Year of publication
Document Type
- Article (143)
- Monograph/Edited Volume (2)
Is part of the Bibliography
- yes (145)
Keywords
- Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) (1)
- Energy-dispersive Laue diffraction (1)
- Interaction of radiation with matter (1)
- Solid state detectors (1)
- X-ray imaging (1)
- X-ray spectroscopy (1)
- pnCCD (1)
Institute
The possibilities and limits of structure refinement of Langmuir-Blodgett films by means of symmetrical reflection of X- rays are described using the example of a stearic acid multilayer. Three different techniques for the determiantion of the electron density profile from reflectivity data are compared; a Fourier method, a Patterson method, and model calculations. The important role of the a priori information for finding the besft structure model is outlined.
Experiments using a simple X-ray interferometer to measure the degree of spatial coherence of hard X-rays are reported. A monolithic Fresnel bimirror is used at small incidence angles to investigate synchrotron radiation in the energy interval 5-50 keV with monochromatic and white beam. The experimental setup was equivalent to a Young's double-slit experiment for hard X-rays with slit dimensions in the micrometre range. From the high-contrast interference pattern the degree of coherence was determined.
A crystal of hen egg-white lysozyme was analyzed by means of energy-dispersive X-ray Laue diffraction with white synchrotron radiation at 2.7 angstrom resolution using a pnCCD detector. From Laue spots measured in a single exposure of the arbitrarily oriented crystal, the lattice constants of the tetragonal unit cell could be extracted with an accuracy of about 2.5%. Scanning across the sample surface, Laue images with split reflections were recorded at various positions. The corresponding diffraction patterns were generated by two crystalline domains with a tilt of about 1 degrees relative to each other. The obtained results demonstrate the potential of the pnCCD for fast X-ray screening of crystals of macromolecules or proteins prior to conventional X-ray structure analysis. The described experiment can be automatized to quantitatively characterize imperfect single crystals or polycrystals.
The first application of a pnCCD detector for X-ray scattering experiments using white synchrotron radiation at BESSY II is presented. A Cd arachidate multilayer was investigated in reflection geometry within the energy range 7 keV < E < 35 keV. At fixed angle of incidence the two-dimensional diffraction pattern containing several multilayer Bragg peaks and respective diffuse-resonant Bragg sheets were observed. Since every pixel of the detector is able to determine the energy of every incoming photon with a resolution Delta E/E similar or equal to 10(-2). a three-dimensional dataset is finally obtained. In order to achieve this energy resolution the detector was operated in the so-called single-photon- counting mode. A full dataset was evaluated taking into account all photons recorded within 10(5) detector frames at a readout rate of 200 Hz. By representing the data in reciprocal-space coordinates, it becomes obvious that this experiment with the pnCCD detector provides the same information as that obtained by combining a large number of monochromatic scattering experiments using conventional area detectors.
Atomic force microscopy inspection of the early state of formation of polymer surface relief grating
(2001)
Bimodal temperature behavior of structure and mobility in high molecular weight p3ht thin films
(2009)
We report a temperature dependent crystalline structure of spin-coated thin films of high molecular weight regioregular poly(3-hexylthiophene) (P3HT) (M-n similar to 30000 g/mol) and its correlation with charge carrier mobility. These investigations show a reversible change of the crystalline structure, where the interlayer lattice spacing (100)along the alkyl side chains continuously increases up to a temperature of about 220 degrees C; in contrast, the in-plane pi-pi distance reduces with increasing temperature. These changes in structure are reversible and can be repeated several times. The temperature-induced structural properties differ for thick and thin films, pointing to a surface/interface role in stabilization of the layer morphology. In contrast to the structural changes, the carrier mobility is rather constant in the temperature range from room temperature up to 100-120 degrees C, followed by a continuous decrease. For thick layers this drop is significant and the transistor performance almost vanishes at high temperature, however, it completely recovers upon cooling back to roorn temperature. The drop of the charge carrier mobility at higher temperatures is in contrast with expectations front the structural studies, considering the increase of crystalline fraction of the polycrystalline layer. our electrical measurements Underscore that the reduction of the macroscopic mobility is mostly caused by it pronounced decrease of the intergrain transport. The thermally induced crystallization along(100) direction and the creation of numerous small crystallites at the film-substrate interface reduce the number of long polymer chain, bridging crystalline domains, which ultimately limits the macroscopic charge transport.
We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a patterned stressor layer. The structure thus contains QW- and quantum-wire-like areas. At low excitation densities, photoluminescence (PL) transients from both areas are well described by a rate equation model for a three-level system with a saturable interlevel carrier transfer representing the lateral drift of carriers from the QW regions into the wires. Small-signal carrier lifetimes for QW, wires, and transfer time from QW to wire are 180, 190, and 28 ps, respectively. For high excitation densities the time constants of the observed transients increase, in agreement with the model. In addition, QW and wire PL lines merge indicating a smoothening of the potential difference, i.e., the effective carrier confinement caused by the stressor structure becomes weaker with increasing excitation. (c) 2005 American Institute of Physics
In this work we study the response of a pnCCD by means of X-ray spectroscopy in the energy range between 6 key and 20 key and by Laue diffraction techniques. The analyses include measurements of characteristic detector parameters like energy resolution, count rate capability and effects of different gain settings. The limit of a single photon counting operation in white beam X-ray diffraction experiments is discussed with regard to the occurrence of pile-up events, for which the energy information about individual photons is lost. In case of monochromatic illumination the pnCCD can be used as a fast conventional CCD with a charge handling capacity (CHC) of about 300,000 electrons per pixel. If the CHC is exceeded, any surplus charge will spill to neighboring pixels perpendicular to the transfer direction due to electrostatic repulsion. The possibilities of increasing the number of storable electrons are investigated for different voltage settings by exposing a single pixel with X-rays generated by a microfocus X-ray source. The pixel binning mode is tested as an alternative approach that enables a pnCCD operation with significantly shorter readout times.
Characterization of InGaAs single quantum wells buried in GaAs[001] by grazing incidence diffraction
(1997)
The third-generation X-ray source BESSYII (Berlin, Germany) provides coherent X-ray radiation which can be used for static and dynamic speckle analysis. Recently we have demonstrated that one can perform experiments with coherent white radiation provided by a bending magnet (5 < E < 20 keV). In this paper we show that the diffraction figure of the initial pinhole must be considered for the interpretation of coherent experiments. The reflectivity spectrum of a sample results from the Fresnel diffraction of the incident pinhole deformed by the static speckle features of the sample surface. For dynamical experiments all speckle like features alter with time whereas the pure Fresnel fringes remain constant. (c) 2007 Published by Elsevier B.V.
Experiments at the bending magnet beamline at BESSY II (EDR beamline) profit from the excellent coherence properties of third generation synchrotron sources. Considering the exponentially decaying incident spectrum, and because no optical elements are installed except slits and vacuum windows, coherence experiments can be performed between 5 keV < E < 15 keV. First, the energy dependence of spatial coherence properties were determined measuring diffraction at single and double pinholes. Next, the coherent white radiation was used to probe the morphology of thin films in reflection geometry. The recorded intensity maps (reflectivity versus sample position) provide speckle patterns which reveal the locally varying sample morphology. Setting the incident angle, alpha(i), smaller or larger than the critical angle of total external reflection, alpha(c), one should be able to separate the surface height profile from the subsurface density modulation of a sample. The validity of this approach is verified at the example of reciprocal space maps taken from a polymer surface where we could reconstruct the lateral height profile from speckle data. (C) 2004 Elsevier B.V. All rights reserved
Dielectric loss spectroscopy (DLS) was performed at compact samples and lamellary organized Langmuir-Blodgett (LB) films from various fatty acid salts. Previous thermoanalytical measurements at compact samples revealed the appearance of two different phase transition temperatures; the lower one is related to the acid the second one to the acid salt molecules. In spite of ill defined electrical contacts with the film the characteristic DLS frequencies obtained from about 100nm thick multilayer films are similar to those recorded from bulk samples. No significant variations of frequencies were found changing the counter ions. Besides conductivity influence at low frequncies we found two relaxations related to the mobility of the dipolar carboxylat-metal group at about 100 and 10000Hz. One of these frequencies is related to the rotation around the chain axis. The strength of this relaxation increases significantly with increasing the sample temperature above 105°C. This temperature is connected with a structural phase transition observed by X-ray reflectometry. In case of Pb-stearate the results of the dielectric measurements help to interprete this structural change as a transition from an orthorhombic into a free-rotator phase. The uncorrelated rotation of molecules around their molecular axes initiates a much increased relaxation strength at the carboxylat-metal sites.
Recently, two different groups have reported independently that the mobility of field-effect transistors made from regioregular poly(3-hexylthiophene) (P3HT) increases strongly with molecular weight. Two different models were presented: one proposing carrier trapping at grain boundaries and the second putting emphasis on the conformation and packing of the polymer chains in the thin layers for different molecular weights. Here, we present the results of detailed investigations of powders and thin films of deuterated P3HT fractions with different molecular weight. For powder samples, gel permeation chromatography (GPC), differential scanning calorimetry (DSC), and X-ray diffraction (XRD) were used to investigate the structure and crystallization behavior of the polymers. The GPC investigations show that all weight fractions possess a rather broad molecular weight distribution. DSC measurements reveal a strong decrease of the crystallization temperature and, most important, a significant decrease of the degree of crystallinity with decreasing molecular weight. To study the structure of thin layers in lateral and vertical directions, both transmission electron microscopy (TEM) and X-ray grazing incidence diffraction (GID) were utilized. These methods show that thin layers of the low molecular weight fraction consist of well-defined crystalline domains embedded in a disordered matrix. We propose that the transport properties of layers prepared from fractions of poly(3-hexylthiophene) with different molecular weight are largely determined by the crystallinity of the samples and not by the perfection of the packing of the chains in the individual crystallites
Formation of a buried density grating on thermal erasure of azobenzene polymer surface gratings
(2002)
An increase in random molecular vibrations of a solid owing to heating above the melting point leads to a decrease in its long-range order and a loss of structural symmetry. Therefore conventional liquids are isotropic media. Here we report on a light-induced isothermal transition of a polymer film from an isotropic solid to an anisotropic liquid state in which the degree of mechanical anisotropy can be controlled by light. Whereas during irradiation by circular polarized light the film behaves as an isotropic viscoelastic fluid, it shows considerable fluidity only in the direction parallel to the light field vector under linear polarized light. The fluidization phenomenon is related to photoinduced motion of azobenzene-functionalized molecular units, which can be effectively activated only when their transition dipole moments are oriented close to the direction of the light polarization. We also describe here how the photofluidization allows nanoscopic elements of matter to be precisely manipulated
The glass transition process gets affected in ultrathin films having thickness comparable to the size of the molecules. We observe systematic broadening of the glass transition temperature (T-g) as the thickness of an ultrathin polymer film reduces below the radius of gyration but the change in the average T-g was found to be very small. The existence of reversible negative and positive thermal expansion below and above T-g increased the sensitivity of our thickness measurements performed using energy-dispersive x-ray reflectivity. A simple model of the T-g variation as a function of depth expected from sliding motion could explain the results
Strain analysis of a laterally patterned Si-wafer was carried out utilizing X-ray grazing-incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV Au+ ions (dose: 0.2, 2 x 10(14) cm(-2)) or 70 keV Ge++ ions (dose: 8 X 10(14) cm(-1)). It was shown that due to implantation a periodical defect structure is created consisting of both implanted and not implanted stripes. The evaluated depth distribution of defects within the implanted stripes corresponds to that obtained by TRIM calculation. The induced strain distribution, however, shows no periodicity. This can be explained by an overlap of the strain fields created in each implanted stripe. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim