Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
- Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.
| Author details: | Rene Kalbitz, Peter FrübingORCiD, Reimund GerhardORCiDGND, D. M. Taylor |
|---|---|
| DOI: | https://doi.org/10.1063/1.3543632 |
| ISSN: | 0003-6951 |
| Title of parent work (English): | Applied physics letters |
| Publisher: | American Institute of Physics |
| Place of publishing: | Melville |
| Publication type: | Article |
| Language: | English |
| Year of first publication: | 2011 |
| Publication year: | 2011 |
| Release date: | 2017/03/26 |
| Volume: | 98 |
| Issue: | 3 |
| Number of pages: | 3 |
| Funding institution: | British Council [ARC 1294]; DAAD [D/07/09993]; Fraunhofer Institute for Applied Polymer Research in Potsdam |
| Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
| Peer review: | Referiert |
