Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
- Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.
Author details: | Rene Kalbitz, Peter FrübingORCiD, Reimund GerhardORCiDGND, D. M. Taylor |
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DOI: | https://doi.org/10.1063/1.3543632 |
ISSN: | 0003-6951 |
Title of parent work (English): | Applied physics letters |
Publisher: | American Institute of Physics |
Place of publishing: | Melville |
Publication type: | Article |
Language: | English |
Year of first publication: | 2011 |
Publication year: | 2011 |
Release date: | 2017/03/26 |
Volume: | 98 |
Issue: | 3 |
Number of pages: | 3 |
Funding institution: | British Council [ARC 1294]; DAAD [D/07/09993]; Fraunhofer Institute for Applied Polymer Research in Potsdam |
Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
Peer review: | Referiert |