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Dual-Characteristic Transistors Based on Semiconducting Polymer Blends
- A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3–0.4 V dec−1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.
Author details: | Guanghao Lu, Riccardo Di Pietro, Lisa Sophie Kölln, Iyad Nasrallah, Ling Zhou, Sonya Mollinger, Scott Himmelberger, Norbert Koch, Alberto Salleo, Dieter NeherORCiDGND |
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DOI: | https://doi.org/10.1002/aelm.201600267 |
ISSN: | 2199-160X |
Title of parent work (English): | Advanced electronic materials |
Publisher: | Wiley-Blackwell |
Place of publishing: | Hoboken |
Publication type: | Article |
Language: | English |
Year of first publication: | 2016 |
Publication year: | 2016 |
Release date: | 2020/03/22 |
Tag: | charge accumulation; crystalline ordering; field-effect-transistor; semiconducting polymers |
Volume: | 2 |
Number of pages: | 7 |
First page: | 2344 |
Last Page: | 2351 |
Funding institution: | Alexander von Humboldt Stiftung; Natural Science Foundation of China [51473132] |
Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
Peer review: | Referiert |