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Ultrafast Electronic Band Gap Control in an Excitonic Insulator

  • We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta2NiSe5 investigated by time-and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of F-C = 0.2 mJ cm(-2), the band gap narrows transiently, while it is enhanced above FC. Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta2NiSe5, whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta2NiSe5 with light on the femtosecond time scale.

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Author details:Selene Mor, Marc HerzogORCiDGND, Denis Golez, Philipp Werner, Martin Eckstein, Naoyuki Katayama, Minoru Nohara, Hide Takagi, Takashi Mizokawa, Claude Monney, Julia Staehler
DOI:https://doi.org/10.1103/PhysRevLett.119.086401
ISSN:0031-9007
ISSN:1079-7114
Pubmed ID:https://pubmed.ncbi.nlm.nih.gov/28952776
Title of parent work (English):Physical review letters
Publisher:American Physical Society
Place of publishing:College Park
Publication type:Article
Language:English
Year of first publication:2017
Publication year:2017
Release date:2020/04/20
Volume:119
Number of pages:5
First page:11559
Last Page:11567
Funding institution:ERC Starting Grant [278023]; ERC Consolidator Grant [724103]; SNSF Grant [200021-140648, PZ00P2_154867]
Organizational units:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie
Peer review:Referiert
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