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- Institut für Physik und Astronomie (4) (entfernen)
The power conversion efficiency (PCE) of state-of-the-art organic solar cells is still limited by significant open-circuit voltage (V-OC) losses, partly due to the excitonic nature of organic materials and partly due to ill-designed architectures. Thus, quantifying different contributions of the V-OC losses is of importance to enable further improvements in the performance of organic solar cells. Herein, the spectroscopic and semiconductor device physics approaches are combined to identify and quantify losses from surface recombination and bulk recombination. Several state-of-the-art systems that demonstrate different V-OC losses in their performance are presented. By evaluating the quasi-Fermi level splitting (QFLS) and the V-OC as a function of the excitation fluence in nonfullerene-based PM6:Y6, PM6:Y11, and fullerene-based PPDT2FBT:PCBM devices with different architectures, the voltage losses due to different recombination processes occurring in the active layers, the transport layers, and at the interfaces are assessed. It is found that surface recombination at interfaces in the studied solar cells is negligible, and thus, suppressing the non-radiative recombination in the active layers is the key factor to enhance the PCE of these devices. This study provides a universal tool to explain and further improve the performance of recently demonstrated high-open-circuit-voltage organic solar cells.
The power conversion efficiency (PCE) of state-of-the-art organic solar cells is still limited by significant open-circuit voltage (V-OC) losses, partly due to the excitonic nature of organic materials and partly due to ill-designed architectures. Thus, quantifying different contributions of the V-OC losses is of importance to enable further improvements in the performance of organic solar cells. Herein, the spectroscopic and semiconductor device physics approaches are combined to identify and quantify losses from surface recombination and bulk recombination. Several state-of-the-art systems that demonstrate different V-OC losses in their performance are presented. By evaluating the quasi-Fermi level splitting (QFLS) and the V-OC as a function of the excitation fluence in nonfullerene-based PM6:Y6, PM6:Y11, and fullerene-based PPDT2FBT:PCBM devices with different architectures, the voltage losses due to different recombination processes occurring in the active layers, the transport layers, and at the interfaces are assessed. It is found that surface recombination at interfaces in the studied solar cells is negligible, and thus, suppressing the non-radiative recombination in the active layers is the key factor to enhance the PCE of these devices. This study provides a universal tool to explain and further improve the performance of recently demonstrated high-open-circuit-voltage organic solar cells.
Putting order into PM6:Y6 solar cells to reduce the langevin recombination in 400 nm thick junction
(2020)
Increasing the active layer thickness without sacrificing the power conversion efficiency (PCE) is one of the great challenges faced by organic solar cells (OSCs) for commercialization. Recently, PM6:Y6 as an OSC based on a non-fullerene acceptor (NFA) has excited the community because of its PCE reaching as high as 15.9%; however, by increasing the thickness, the PCE drops due to the reduction of the fill factor (FF). This drop is attributed to change in mobility ratio with increasing thickness. Furthermore, this work demonstrates that by regulating the packing and the crystallinity of the donor and the acceptor, through volumetric content of chloronaphthalene (CN) as a solvent additive, one can improve the FF of a thick PM6:Y6 device (approximate to 400 nm) from 58% to 68% (PCE enhances from 12.2% to 14.4%). The data indicate that the origin of this enhancement is the reduction of the structural and energetic disorders in the thick device with 1.5% CN compared with 0.5% CN. This correlates with improved electron and hole mobilities and a 50% suppressed bimolecular recombination, such that the non-Langevin reduction factor is 180 times. This work reveals the role of disorder on the charge extraction and bimolecular recombination of NFA-based OSCs.
Understanding and disentangling photophysical properties of long-lived photoexcitations in bulk heterojunction (BHJ) solar cells, which contribute mostly to photocurrent, provide essential guidelines to their improvement. However, to construct improved physical models, their rational design relies on reliable measurement techniques for charge recombination. Here, we combine photocurrent and photoinduced absorption spectroscopy (PCPIA) to directly probe the free carrier concentration and investigate loss mechanisms of long-lived excitations in nearly 10% efficient PPDT2FBT/PC70BM BHJ solar cells under steady-state operational conditions. From the PCPIA data obtained under open- circuit and short-circuit conditions, the absorption cross section and the concentration of photoexcitations are obtained. This material system exhibits an exceptionally low bimolecular recombination rate, about 300 times smaller than the diffusion-controlled electron and hole encounter rate. Furthermore, we observe that the fill factor is limited by losses originating from long-lived photoexcitations undergoing dispersive bimolecular recombination.