Institut für Informatik und Computational Science
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The intensity of cosmic radiation may differ over five orders of magnitude within a few hours or days during the Solar Particle Events (SPEs), thus increasing for several orders of magnitude the probability of Single Event Upsets (SEUs) in space-borne electronic systems. Therefore, it is vital to enable the early detection of the SEU rate changes in order to ensure timely activation of dynamic radiation hardening measures. In this paper, an embedded approach for the prediction of SPEs and SRAM SEU rate is presented. The proposed solution combines the real-time SRAM-based SEU monitor, the offline-trained machine learning model and online learning algorithm for the prediction. With respect to the state-of-the-art, our solution brings the following benefits: (1) Use of existing on-chip data storage SRAM as a particle detector, thus minimizing the hardware and power overhead, (2) Prediction of SRAM SEU rate one hour in advance, with the fine-grained hourly tracking of SEU variations during SPEs as well as under normal conditions, (3) Online optimization of the prediction model for enhancing the prediction accuracy during run-time, (4) Negligible cost of hardware accelerator design for the implementation of selected machine learning model and online learning algorithm. The proposed design is intended for a highly dependable and self-adaptive multiprocessing system employed in space applications, allowing to trigger the radiation mitigation mechanisms before the onset of high radiation levels.
We present a method employing Answer Set Programming in combination with Approximate Model Counting for fast and accurate calculation of error propagation probabilities in digital circuits. By an efficient problem encoding, we achieve an input data format similar to a Verilog netlist so that extensive preprocessing is avoided. By a tight interconnection of our application with the underlying solver, we avoid iterating over fault sites and reduce calls to the solver. Several circuits were analyzed with varying numbers of considered cycles and different degrees of approximation. Our experiments show, that the runtime can be reduced by approximation by a factor of 91, whereas the error compared to the exact result is below 1%.
Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.
The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage.
A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed.
The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2.
The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage.
A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
Eine übliche Erzählung verknüpft lange Studienzeiten und hohe Abbrecherquoten im Informatikstudium zum einen mit der sehr gut bezahlten Nebentätigkeit von Studierenden in der Informatikbranche, die deutlich studienzeitverlängernd sei; zum anderen werde wegen des hohen Bedarfs an Informatikern ein formeller Studienabschluss von den Studierenden häufig als entbehrlich betrachtet und eine Karriere in der Informatikbranche ohne abgeschlossenes Studium begonnen. In dieser Studie, durchgeführt an der Universität Potsdam, untersuchen wir, wie viele Informatikstudierende neben dem Studium innerhalb und außerhalb der Informatikbranche arbeiten, welche Erwartungen sie neben der Bezahlung damit verbinden und wie sich die Tätigkeit auf ihr Studium und ihre spätere berufliche Perspektive auswirkt. Aus aktuellem Anlass interessieren uns auch die Auswirkungen der Covid-19-Pandemie auf die Arbeitstätigkeiten der Informatikstudierenden.
In this paper two new methods for the design of fault-tolerant pipelined sequential and combinational circuits, called Error Detection and Partial Error Correction (EDPEC) and Full Error Detection and Correction (FEDC), are described. The proposed methods are based on an Error Detection Logic (EDC) in the combinational circuit part combined with fault tolerant memory elements implemented using fault tolerant master–slave flip-flops. If a transient error, due to a transient fault in the combinational circuit part is detected by the EDC, the error signal controls the latching stage of the flip-flops such that the previous correct state of the register stage is retained until the transient error disappears. The system can continue to work in its previous correct state and no additional recovery procedure (with typically reduced clock frequency) is necessary. The target applications are dataflow processing blocks, for which software-based recovery methods cannot be easily applied. The presented architectures address both single events as well as timing faults of arbitrarily long duration. An example of this architecture is developed and described, based on the carry look-ahead adder. The timing conditions are carefully investigated and simulated up to the layout level. The enhancement of the baseline architecture is demonstrated with respect to the achieved fault tolerance for the single event and timing faults. It is observed that the number of uncorrected single events is reduced by the EDPEC architecture by 2.36 times compared with previous solution. The FEDC architecture further reduces the number of uncorrected events to zero and outperforms the Triple Modular Redundancy (TMR) with respect to correction of timing faults. The power overhead of both new architectures is about 26–28% lower than the TMR.