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This paper presents a scalable E-band radar platform based on single-channel fully integrated transceivers (TRX) manufactured using 130-nm silicon-germanium (SiGe) BiCMOS technology. The TRX is suitable for flexible radar systems exploiting massive multiple-input-multipleoutput (MIMO) techniques for multidimensional sensing. A fully integrated fractional-N phase-locked loop (PLL) comprising a 39.5-GHz voltage-controlled oscillator is used to generate wideband frequency-modulated continuous-wave (FMCW) chirp for E-band radar front ends. The TRX is equipped with a vector modulator (VM) for high-speed carrier modulation and beam-forming techniques. A single TRX achieves 19.2-dBm maximum output power and 27.5-dB total conversion gain with input-referred 1-dB compression point of -10 dBm. It consumes 220 mA from 3.3-V supply and occupies 3.96 mm(2) silicon area. A two-channel radar platform based on full-custom TRXs and PLL was fabricated to demonstrate high-precision and high-resolution FMCW sensing. The radar enables up to 10-GHz frequency ramp generation in 74-84-GHz range, which results in 1.5-cm spatial resolution. Due to high output power, thus high signal-to-noise ratio (SNR), a ranging precision of 7.5 mu m for a target at 2 m was achieved. The proposed architecture supports scalable multichannel applications for automotive FMCW using a single local oscillator (LO).
This paper investigates the applicability of CMOS decoupling cells for mitigating the Single Event Transient (SET) effects in standard combinational gates. The concept is based on the insertion of two decoupling cells between the gate's output and the power/ground terminals. To verify the proposed hardening approach, extensive SPICE simulations have been performed with standard combinational cells designed in IHP's 130 nm bulk CMOS technology. Obtained simulation results have shown that the insertion of decoupling cells results in the increase of the gate's critical charge, thus reducing the gate's soft error rate (SER). Moreover, the decoupling cells facilitate the suppression of SET pulses propagating through the gate. It has been shown that the decoupling cells may be a competitive alternative to gate upsizing and gate duplication for hardening the gates with lower critical charge and multiple (3 or 4) inputs, as well as for filtering the short SET pulses induced by low-LET particles.