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New aromatic poly(amide-ether)s (II) have been synthesized by solution polycondensation of various aromatic diamines having two ether bridges (I) with a diacid chloride containing silicon, namely bis(chlorocarbonylphenyl)- diphenyIsilane. These polymers are easy soluble in polar amidic solvents such as N-methylpyrrolidinone or dimethylformamide and can be cast into thin flexible films or coatings from such solutions. They show high thermal stability with initial decomposition temperature being above 400 °C. Their glass transition temperatures lie in the range of 220-250 °C, except for polymer He which did not show a clear Tg when heated in a differential scanning calorimetry experiment up to 300 °C. The large interval between the glass transition and decomposition temperatures of pnlymers Ia-Id could be advantageous for their processing via compression molding. The polymer coatings deposited by the spincoating, technique onto silicon wafers showed a very smooth, pinhole-free surface in atomic force microscopy investigations. The free-standing films of 20-30 mm thickness show low dielectric constant, in the range of 3.65-3.78, which is promising for future application as high performance dielectrics.
Thin films in the range of 50 nm to 10 mm thickness have been prepared from NMP solutions of silicon-containing polyphenylquinoxaline-amides which had been synthesized by the polycondensation reaction of aromatic diaminophenylquinoxalines with bis(p-chlorocarbonylphenyl)diphenylsilane. A spin-coating technique onto glass plates or onto silicon wafers was used to make the film, followed by gradual heating to remove the solvent. The resulting films were very smooth and free of pinholes when studied by atomic force microscopy (AFM). They showed a strong adhesion to silicon wafers, were thermally stable in air to above 400 °C and their dielectric constant was in the range of 3.5-3.7. Thermal treatment of the films was performed in order to induce crosslinking. Such treated films became completely insoluble in organic solvents, maintained their smoothness and strong adhesion to the silicon substrate, and did not show any Tg, in DSC experiments. Their FTIR spectra in reflection mode did not show any changes compared with the untreated films, meaning on the one hand that the polymers maintain their structural integrity at high temperature and on the other hand that the number of crosslinks was very low and could not be detected by IR spectroscopy.
Study of crosslinking process in fluorinated poly(imide-amide)s containing pendant cyano groups
(1994)
Study of crosslinking process in fluorinated poly(imide-amide)s containing pendant cyano groups
(1994)
A series of new poly-1,3,4-oxadiazoles has been synthesized by polycondensation reaction of hydrazine sulfate with a mixture of a dicarboxylic acid containing unsaturated bonds and a dicarboxylic acid containing silicon, by using methanesulfonic acid/phosphorus pentoxide as a reaction medium. These polymers were highly thermostable but they were only soluble in strong inorganic acids such as sulfuric or methanesulfonic ones. An alternative way was followed by using the corresponding dihydrazides containing unsaturated bonds and the corresponding diacid chloride containing silicon that reacted in N-methylpyrrolidinone (NMP) to give soluble silicon-containing unsaturated polyhydrazides, which were cyclodehydrated either by thermal or chemical treatment to give the corresponding polyoxadiazoles. Very thin coatings of polyhydrazides and polyoxadiazoles were deposited onto silicon wafers and they showed a very smooth surface, free of pinholes, when studied by atomic force microscopy (AFM). Some polyoxadiazole films showed strong blue photoluminescence.
New poly(phenylquinoxaline-amide)s with silicon in the main chain have been prepared by polycondensation reaction of a diacid chloride, namely bis(p-chlorocarbonyl-phenyl)-diphenylsilane, with aromatic diamines containing one or two phenylquinoxaline rings separated by a flexible bridge such as ether or methylene. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF) and showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 260- 304°C. Polymer solutions in NMP were processed into thin flexible films which exhibited very smooth surfaces, free of pinholes when studied by atomic force microscopy. The free-standing films showed a dielectric constant in the range of 3.6-3.7.
Synthesis of fluorinated poly(phenylquinoxaline-amide)s and study of thin films made therefrom
(1999)
A series of five fluorinated poly(phenylquinoxaline-amide)s were synthesized by a polycondensation reaction of a diacid chloride containing the hexafluoroisopropylidene (6F) group, namely 2,2-bis(p-chlorocarbonylphenyl)- hexafluoropropane, with various aromatic diamines incorporating two phenyl-substituted quinoxaline rings. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolione (NMP), dimethylformamide (DMF), and tetrahydrofurane (THF), and showed a high thermal stability with decomposition temperatures above 400 °C and glass transition temperatures in the range of 260-290 Tg. Polymer solutions in NMP were processed into free-standing films that showed low dielectric constant values, in the range of 3.4-3.9, and good mechanical properties, with tensile strength in the range of 40-80 MPa and elongation to break in the range of 22-55%. Very thin films, in the range of tens of nanometer, which were deposited onto silicon wafers exhibited very smooth surfaces, free of pinholes when studied by atomic force microscopy (AFM).
Aromatic polyamides containing silicon and phenylquinoxaline rings in the main chain have been prepared by polycondensation reaction of a silicon-containing diacid chloride, namely bis(p-chlorocarbonylphenyl) -diphenylsilane, with various aromatic diamines having preformed phenylquinoxaline units. These polymers were easily soluble in polar aprotic solvents, such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF), and in tetrahydrofurane. They showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 253-304°C. Polymer solutions in NMP were processed into thin films having the thickness of tens of nanometer to 10 mm, by spin-coating onto glass plates or silicon wafers. The films had strong adhesion to substrates and exhibited very smooth surfaces, free of pinholes, in atomic force microscopy (AFM) studies. The free-standing films had dielectric constant in the range of 3.48-3.69. Thermal treatment of the films up to 350°C rendered them completely insoluble in organic solvents, while maintaining their smoothness and strong adhesion to the silicon substrate, and with no Tg in DSC experiments. Their FTIR spectra did not show any changes compared to the untreated films, meaning that polymers maintain their structural integrity at high temperature. Ó 1999 Elsevier Science S.A. All rights reserved.