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Study of crosslinking process in fluorinated poly(imide-amide)s containing pendant cyano groups
(1994)
New aromatic poly(amide-ether)s (II) have been synthesized by solution polycondensation of various aromatic diamines having two ether bridges (I) with a diacid chloride containing silicon, namely bis(chlorocarbonylphenyl)- diphenyIsilane. These polymers are easy soluble in polar amidic solvents such as N-methylpyrrolidinone or dimethylformamide and can be cast into thin flexible films or coatings from such solutions. They show high thermal stability with initial decomposition temperature being above 400 °C. Their glass transition temperatures lie in the range of 220-250 °C, except for polymer He which did not show a clear Tg when heated in a differential scanning calorimetry experiment up to 300 °C. The large interval between the glass transition and decomposition temperatures of pnlymers Ia-Id could be advantageous for their processing via compression molding. The polymer coatings deposited by the spincoating, technique onto silicon wafers showed a very smooth, pinhole-free surface in atomic force microscopy investigations. The free-standing films of 20-30 mm thickness show low dielectric constant, in the range of 3.65-3.78, which is promising for future application as high performance dielectrics.
Thin films in the range of 50 nm to 10 mm thickness have been prepared from NMP solutions of silicon-containing polyphenylquinoxaline-amides which had been synthesized by the polycondensation reaction of aromatic diaminophenylquinoxalines with bis(p-chlorocarbonylphenyl)diphenylsilane. A spin-coating technique onto glass plates or onto silicon wafers was used to make the film, followed by gradual heating to remove the solvent. The resulting films were very smooth and free of pinholes when studied by atomic force microscopy (AFM). They showed a strong adhesion to silicon wafers, were thermally stable in air to above 400 °C and their dielectric constant was in the range of 3.5-3.7. Thermal treatment of the films was performed in order to induce crosslinking. Such treated films became completely insoluble in organic solvents, maintained their smoothness and strong adhesion to the silicon substrate, and did not show any Tg, in DSC experiments. Their FTIR spectra in reflection mode did not show any changes compared with the untreated films, meaning on the one hand that the polymers maintain their structural integrity at high temperature and on the other hand that the number of crosslinks was very low and could not be detected by IR spectroscopy.
New poly(phenylquinoxaline-amide)s with silicon in the main chain have been prepared by polycondensation reaction of a diacid chloride, namely bis(p-chlorocarbonyl-phenyl)-diphenylsilane, with aromatic diamines containing one or two phenylquinoxaline rings separated by a flexible bridge such as ether or methylene. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF) and showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 260- 304°C. Polymer solutions in NMP were processed into thin flexible films which exhibited very smooth surfaces, free of pinholes when studied by atomic force microscopy. The free-standing films showed a dielectric constant in the range of 3.6-3.7.
Aromatic polyamides containing silicon and phenylquinoxaline rings in the main chain have been prepared by polycondensation reaction of a silicon-containing diacid chloride, namely bis(p-chlorocarbonylphenyl) -diphenylsilane, with various aromatic diamines having preformed phenylquinoxaline units. These polymers were easily soluble in polar aprotic solvents, such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF), and in tetrahydrofurane. They showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 253-304°C. Polymer solutions in NMP were processed into thin films having the thickness of tens of nanometer to 10 mm, by spin-coating onto glass plates or silicon wafers. The films had strong adhesion to substrates and exhibited very smooth surfaces, free of pinholes, in atomic force microscopy (AFM) studies. The free-standing films had dielectric constant in the range of 3.48-3.69. Thermal treatment of the films up to 350°C rendered them completely insoluble in organic solvents, while maintaining their smoothness and strong adhesion to the silicon substrate, and with no Tg in DSC experiments. Their FTIR spectra did not show any changes compared to the untreated films, meaning that polymers maintain their structural integrity at high temperature. Ó 1999 Elsevier Science S.A. All rights reserved.
Experimental results show that the polymerization of pyrrole in the presence of beta-naphthalenesulfonic acid and different fluorosurfactants like perfluorooctanesulfonic acid, perfluorooctyldiethanolamide, and ammonium perfluorooctanoate leads to polypyrrole with special morphologies, such as rings or disks and rectangular frames or plates. The formation of these unusually shaped particles of polymer dispersions is explained by the chemical and colloidal peculiarities of the oxidative pyrrole polymerization with ammonium peroxodisulfate in aqueous medium.