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Efficient electrical doping of organic semiconductors is a necessary prerequisite for the fabrication of high performance organic electronic devices. In this work, we study p-type doping of poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) spin-cast from two different solvents. Using electron diffraction, we find strong dopant-induced pi-pi-stacking for films from the solvent chloroform, but not from chlorobenzene. This image is confirmed and expanded by the analysis of vibrational features of P3HT and polaron absorptions using optical spectroscopy. Here, a red-shifted polaron absorption is found in doped films from chloroform, caused by a higher conjugation length of the polymer backbone. These differences result in a higher conductivity of films from chloroform. We use optical spectroscopy on the corresponding blend solutions to shed light on the origin of this effect and propose a model to explain why solutions of doped P3HT reveal more aggregation of charged molecules in chlorobenzene, whereas more order is finally observed in dried films from chloroform. Our study emphasizes the importance of solvent parameters exceeding the bare solubility of pure dopant and host material for the preparation of highly conductive doped films.
The electrical conductivity of organic semiconductors can be enhanced by orders of magnitude via doping with strong molecular electron acceptors or donors. Ground-state integer charge transfer and charge-transfer complex formation between organic semiconductors and molecular dopants have been suggested as the microscopic mechanisms causing these profound changes in electrical materials properties. Here, we study charge-transfer interactions between the common molecular p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and a systematic series of thiophene-based copolymers by a combination of spectroscopic techniques and electrical measurements. Subtle variations in chemical structure are seen to significantly impact the nature of the charge-transfer species and the efficiency of the doping process, underlining the need for a more detailed understanding of the microscopic doping mechanism in organic semiconductors to reliably guide targeted chemical design.
Bimodal temperature behavior of structure and mobility in high molecular weight p3ht thin films
(2009)
We report a temperature dependent crystalline structure of spin-coated thin films of high molecular weight regioregular poly(3-hexylthiophene) (P3HT) (M-n similar to 30000 g/mol) and its correlation with charge carrier mobility. These investigations show a reversible change of the crystalline structure, where the interlayer lattice spacing (100)along the alkyl side chains continuously increases up to a temperature of about 220 degrees C; in contrast, the in-plane pi-pi distance reduces with increasing temperature. These changes in structure are reversible and can be repeated several times. The temperature-induced structural properties differ for thick and thin films, pointing to a surface/interface role in stabilization of the layer morphology. In contrast to the structural changes, the carrier mobility is rather constant in the temperature range from room temperature up to 100-120 degrees C, followed by a continuous decrease. For thick layers this drop is significant and the transistor performance almost vanishes at high temperature, however, it completely recovers upon cooling back to roorn temperature. The drop of the charge carrier mobility at higher temperatures is in contrast with expectations front the structural studies, considering the increase of crystalline fraction of the polycrystalline layer. our electrical measurements Underscore that the reduction of the macroscopic mobility is mostly caused by it pronounced decrease of the intergrain transport. The thermally induced crystallization along(100) direction and the creation of numerous small crystallites at the film-substrate interface reduce the number of long polymer chain, bridging crystalline domains, which ultimately limits the macroscopic charge transport.