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The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage.
A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed.
The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2.
The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage.
A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions.
This study investigates the use of pulse stretching (skew-sized) inverters for monitoring the variation of count rate and linear energy transfer (LET) of energetic particles. The basic particle detector is a cascade of two pulse stretching inverters, and the required sensing area is obtained by connecting up to 12 two-inverter cells in parallel and employing the required number of parallel arrays. The incident particles are detected as single-event transients (SETs), whereby the SET count rate denotes the particle count rate, while the SET pulsewidth distribution depicts the LET variations. The advantage of the proposed solution is the possibility to sense the LET variations using fully digital processing logic. SPICE simulations conducted on IHP's 130-nm CMOS technology have shown that the SET pulsewidth varies by approximately 550 ps over the LET range from 1 to 100 MeV center dot cm(2) center dot mg(-1). The proposed detector is intended for triggering the fault-tolerant mechanisms within a self-adaptive multiprocessing system employed in space. It can be implemented as a standalone detector or integrated in the same chip with the target system.
The intensity of cosmic radiation may differ over five orders of magnitude within a few hours or days during the Solar Particle Events (SPEs), thus increasing for several orders of magnitude the probability of Single Event Upsets (SEUs) in space-borne electronic systems. Therefore, it is vital to enable the early detection of the SEU rate changes in order to ensure timely activation of dynamic radiation hardening measures. In this paper, an embedded approach for the prediction of SPEs and SRAM SEU rate is presented. The proposed solution combines the real-time SRAM-based SEU monitor, the offline-trained machine learning model and online learning algorithm for the prediction. With respect to the state-of-the-art, our solution brings the following benefits: (1) Use of existing on-chip data storage SRAM as a particle detector, thus minimizing the hardware and power overhead, (2) Prediction of SRAM SEU rate one hour in advance, with the fine-grained hourly tracking of SEU variations during SPEs as well as under normal conditions, (3) Online optimization of the prediction model for enhancing the prediction accuracy during run-time, (4) Negligible cost of hardware accelerator design for the implementation of selected machine learning model and online learning algorithm. The proposed design is intended for a highly dependable and self-adaptive multiprocessing system employed in space applications, allowing to trigger the radiation mitigation mechanisms before the onset of high radiation levels.
We present a method employing Answer Set Programming in combination with Approximate Model Counting for fast and accurate calculation of error propagation probabilities in digital circuits. By an efficient problem encoding, we achieve an input data format similar to a Verilog netlist so that extensive preprocessing is avoided. By a tight interconnection of our application with the underlying solver, we avoid iterating over fault sites and reduce calls to the solver. Several circuits were analyzed with varying numbers of considered cycles and different degrees of approximation. Our experiments show, that the runtime can be reduced by approximation by a factor of 91, whereas the error compared to the exact result is below 1%.
Use of a standard non-rad-hard digital cell library in the rad-hard design can be a cost-effective solution for space applications. In this paper we demonstrate how a standard non-rad-hard flip-flop, as one of the most vulnerable digital cells, can be converted into a rad-hard flip-flop without modifying its internal structure. We present five variants of a Triple Modular Redundancy (TMR) flip-flop: baseline TMR flip-flop, latch-based TMR flip-flop, True-Single Phase Clock (TSPC) TMR flip-flop, scannable TMR flip-flop and self-correcting TMR flipflop. For all variants, the multi-bit upsets have been addressed by applying special placement constraints, while the Single Event Transient (SET) mitigation was achieved through the usage of customized SET filters and selection of optimal inverter sizes for the clock and reset trees. The proposed flip-flop variants feature differing performance, thus enabling to choose the optimal solution for every sensitive node in the circuit, according to the predefined design constraints. Several flip-flop designs have been validated on IHP's 130nm BiCMOS process, by irradiation of custom-designed shift registers. It has been shown that the proposed TMR flip-flops are robust to soft errors with a threshold Linear Energy Transfer (LET) from (32.4 MeV.cm(2)/mg) to (62.5 MeV.cm(2)/mg), depending on the variant.
Full error detection and correction method applied on pipelined structure using two approaches
(2020)
In this paper, two approaches are evaluated using the Full Error Detection and Correction (FEDC) method for a pipelined structure. The approaches are referred to as Full Duplication with Comparison (FDC) and Concurrent Checking with Parity Prediction (CCPP). Aforementioned approaches are focused on the borderline cases of FEDC method which implement Error Detection Circuit (EDC) in two manners for the purpose of protection of combinational logic to address the soft errors of unspecified duration. The FDC approach implements a full duplication of the combinational circuit, as the most complex and expensive implementation of the FEDC method, and the CCPP approach implements only the parity prediction bit, being the simplest and cheapest technique, for soft error detection. Both approaches are capable of detecting soft errors in the combinational logic, with single faults being injected into the design. On the one hand, the FDC approach managed to detect and correct all injected faults while the CCPP approach could not detect multiple faults created at the output of combinational circuit. On the other hand, the FDC approach leads to higher power consumption and area increase compared to the CCPP approach.
In this paper, an asynchronous design for soft error detection and correction in combinational and sequential circuits is presented. The proposed architecture is called Asynchronous Full Error Detection and Correction (AFEDC). A custom design flow with integrated commercial EDA tools generates the AFEDC using the asynchronous bundled-data design style. The AFEDC relies on an Error Detection Circuit (EDC) for protecting the combinational logic and fault-tolerant latches for protecting the sequential logic. The EDC can be implemented using different detection methods. For this work, two boundary variants are considered, the Full Duplication with Comparison (FDC) and the Partial Duplication with Parity Prediction (PDPP). The AFEDC architecture can handle single events and timing faults of arbitrarily long duration as well as the synchronous FEDC, but additionally can address known metastability issues of the FEDC and other similar synchronous architectures and provide a more practical solution for handling the error recovery process. Two case studies are developed, a carry look-ahead adder and a pipelined non-restoring array divider. Results show that the AFEDC provides equivalent fault coverage when compared to the FEDC while reducing area, ranging from 9.6% to 17.6%, and increasing energy efficiency, which can be up to 6.5%.
A triple modular redundancy (TMR) based design technique for double cell upsets (DCUs) mitigation is investigated in this paper. This technique adds three extra self-voter circuits into a traditional TMR structure to enable the enhanced error correction capability. Fault-injection simulations show that the soft error rate (SER) of the proposed technique is lower than 3% of that of TMR. The implementation of this proposed technique is compatible with the automatic digital design flow, and its applicability and performance are evaluated on an FIFO circuit.
This work introduces an embedded approach for the prediction of Solar Particle Events (SPEs) in space applications by combining the real-time Soft Error Rate (SER) measurement with SRAM-based detector and the offline trained machine learning model. The proposed approach is intended for the self-adaptive fault-tolerant multiprocessing systems employed in space applications. With respect to the state-of-the-art, our solution allows for predicting the SER 1 h in advance and fine-grained hourly tracking of SER variations during SPEs as well as under normal conditions. Therefore, the target system can activate the appropriate mechanisms for radiation hardening before the onset of high radiation levels. Based on the comparison of five different machine learning algorithms trained with the public space flux database, the preliminary results indicate that the best prediction accuracy is achieved with the recurrent neural network (RNN) with long short-term memory (LSTM).