Refine
Document Type
- Article (3)
- Doctoral Thesis (1)
Is part of the Bibliography
- yes (4)
Keywords
Institute
Capacitance-voltage (C-V) and current-voltage measurements have been undertaken on metal-ferroelectric-semiconductor capacitors and ferroelectric field-effect transistors (FeFETs) using the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator and poly(3-hexylthiophene) as the active semiconductor. C-V measurements, voltage-dependence of gate currents and FeFET transfer characteristics all confirm that ferroelectric polarization is stable and only reverses when positive/negative coercive fields are exceeded for the first time. The apparent instability observed following the application of depletion voltages arises from the development of a negative interfacial charge which more than compensates the ferroelectric-induced shift, resulting in a permanent shift in threshold voltage to positive values. Application of successive bipolar voltage sweeps to a diode-connected FeFET show that significant remanent polarization is only induced in an unpoled device when the coercive field is exceeded during the first application of accumulation voltages. This initial polarization and its growth during subsequent bipolar voltage sweeps is accompanied by the accumulation of the fixed interfacial negative charges which cause the positive turn on voltages seen in C-V and transfer characteristics. The origin of the negative charge is ascribed either to layers of irreversible ferroelectric domains at the insulator surface or to the drift to the insulator-semiconductor interface of F-ions produced electrolytically during the application of accumulation voltages.
Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.
Organic thin film transistors (TFT) are an attractive option for low cost electronic applications and may be used for active matrix displays and for RFID applications. To extend the range of applications there is a need to develop and optimise the performance of non-volatile memory devices that are compatible with the solution-processing fabrication procedures used in plastic electronics. A possible candidate is an organic TFT incorporating the ferroelectric co-polymer poly(vinylidenefluoride-trifluoroethylene)(P(VDF-TrFE)) as the gate insulator. Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) as the gate insu-lator. The capacitance spectra of MIS devices, were measured under different biases, showing the effect of charge accumulation and depletion on the Maxwell-Wagner peak. The position and height of this peak clearly indicates the lack of stable depletion behavior and the decrease of mobility when increasing the depletion zone width, i.e. upon moving into the P3HT bulk. The lack of stable depletion was further investigated with capacitance-voltage (C-V) measurements. When the structure was driven into depletion, C-V plots showed a positive flat-band voltage shift, arising from the change in polarization state of the ferroelectric insulator. When biased into accumulation, the polarization was reversed. It is shown that the two polarization states are stable i.e. no depolarization occurs below the coercive field. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flat-band voltage expected during the sweep to accumulation voltages. The measured output characteristics of the studied ferroelectric-field-effect transistors confirmed the results of the C-V plots. Furthermore, the results indicated a trapping of electrons at the positively charged surfaces of the ferroelectrically polarized P(VDF-TrFE) crystallites near the insulator/semiconductor in-terface during the first poling cycles. The study of the MIS structure by means of thermally stimulated current (TSC) revealed further evidence for the stability of the polarization under depletion voltages. It was shown, that the lack of stable depletion behavior is caused by the compensation of the orientational polarization by fixed electrons at the interface and not by the depolarization of the insulator, as proposed in several publications. The above results suggest a performance improvement of non-volatile memory devices by the optimization of the interface.