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The genus Microhyla Tschudi, 1838 includes 52 species and is one of the most diverse genera of the family Microhylidae, being the most species-rich taxon of the Asian subfamily Microhylinae. The recent, rapid description of numerous new species of Microhyla with complex phylogenetic relationships has made the taxonomy of the group especially challenging. Several recent phylogenetic studies suggested paraphyly of Microhyla with respect to Glyphoglossus Gunther, 1869, and revealed three major phylogenetic lineages of mid-Eocene origin within this assemblage. However, comprehensive works assessing morphological variation among and within these lineages are absent. In the present study we investigate the generic taxonomy of Microhyla-Glyphoglossus assemblage based on a new phylogeny including 57 species, comparative morphological analysis of skeletons from cleared-and-stained specimens for 23 species, and detailed descriptions of generalized osteology based on volume-rendered micro-CT scans for five speciesal-together representing all major lineages within the group. The results confirm three highly divergent and well-supported clades that correspond with external and osteological morphological characteristics, as well as respective geographic distribution. Accordingly, acknowledging ancient divergence between these lineages and their significant morphological differentiation, we propose to consider these three lineages as distinct genera: Microhyla sensu stricto, Glyphoglossus, and a newly described genus, Nanohyla gen. nov.
In this paper the study of the tunneling current-voltage (I-V) characteristics of silicon surfaces with n- and p-type conductivity as a function of roughness in the presence of an adsorbed insulating layer of polyethylenimine (PEI) is presented. A new approach is proposed for analysis of the tunnel current-voltage characteristics of a metal-insulator-semiconductor structure based on the combination of two models (Simmons and Schottky). Such joint analysis demonstrates the effect of surface states and evaluates changes in the band bending and electron affinity after the deposition of the polyelectrolyte layer on the semiconductor surface. As a result, we are able to differentiate between the equilibrium tunnel barrier (q phi (0)) and the barrier height (q phi (B)). It is shown that the deposition of the polymer leads to an increase of the equilibrium tunnel barrier by more than 250 meV, irrespective of the roughness and the conductivity type of the silicon substrate. The PEI deposition also leads to changes in the barrier height (less than 25 meV) that are smaller than the equilibrium tunnel barrier changes, indicating pinning of the Fermi level by the electron surface states that are energetically close to it. These surface states can trap charge carriers, a process leading to the formation of a depletion region and band bending on the semiconductor surface. Moreover, the change in the barrier height q Delta phi (B) depends on the conductivity type of the semiconductor, being positive for n-type and negative for p-type, in contrast to q Delta phi (0), which is positive for all substrates. The change is explained by capture of electrons preferably from the semiconductor space-charge region in the presence of a cationic polyelectrolyte, e.g., PEI.