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New heterocyclic polyamides have been synthesized by solution polycondensation of aromatic diamines containing phenyl- quinoxaline units with diacid chlorides having both imide and hexafluoroisopropylidene (6F) groups. These polymers are soluble in polar aprotic solvents, such as N-methylpyrrolidone (NMP) or N,N-dimethylformamide (DMF), and can be cast into flexible thin films from solutions. They show high thermooxidative stability with decomposition temperatures above 400°C and glass transition temperatures in the range of 225 - 300°C. The polymer films exhibit good chemical resistance towards deluted acids and good electrical insulating properties with dielectric constants in the range of 3.2 - 3.7.
A series of aromatic polyamides incorporating silicon together with phenylquinoxaline or with hexafluoroisopropylidene groups has been synthesized by solution polycondensation of a silicon-containing diacid chloride with aromatic diamines having phenylquinoxaline rings or hexafluoroisopropylidene groups. These polymers are easily soluble in polar aprotic solvents, such as N-methylpyrrolidinone and dimethylformamide, and in tetrahydrofurane, and can be solution-cast into thin, transparent films having low dielectric constant, in the range of 3.26 to 3.68. These polymers show high thermal stability with decomposition temperature being above 400 °C and glass transition temperature in the range of 236 °C to 275 °C.
New poly(phenylquinoxaline-amide)s with silicon in the main chain have been prepared by polycondensation reaction of a diacid chloride, namely bis(p-chlorocarbonyl-phenyl)-diphenylsilane, with aromatic diamines containing one or two phenylquinoxaline rings separated by a flexible bridge such as ether or methylene. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF) and showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 260- 304°C. Polymer solutions in NMP were processed into thin flexible films which exhibited very smooth surfaces, free of pinholes when studied by atomic force microscopy. The free-standing films showed a dielectric constant in the range of 3.6-3.7.