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Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers

  • Ultra thin organic layers of benzene-type molecules are able to passivate Si surfaces. The organic layers were electrochemically deposited on Si surfaces from aqueous solution of diazonium compounds and show a blocking of the charge transfer from Si into the electrolyte after the deposition process. Electron microscopic images reveal a compact and homogeneous organic layer of 4-bromobenzene on the Si. The surface recombination increases only slightly with respect to a well H-passivated Si surface, so that the interface state density is about 10(11) cm(2) or slightly below. Organic layer modified Si surfaces are much longer stable in ambient air than the H-terminated surface as observed by a slower decay of the integrated photoluminescence intensity with time. Thermal desorption measurements show that the organic layer is stable up to about 200 degrees C.

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Author details:J. Rappich, P. Hartig, N. H. Nickel, I. Sieber, S. Schulze, T. Dittrich
ISSN:0167-9317
Publication type:Article
Language:English
Year of first publication:2005
Publication year:2005
Release date:2017/03/24
Source:Microelectronic Engineering. - ISSN 0167-9317. - 80 (2005), S. 62 - 65
Organizational units:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie
Peer review:Referiert
Publishing method:Open Access
Institution name at the time of the publication:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik
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