- On the basis of a stochastic model of hopping transport in disordered solids we present results of simulations of the dark discharge of surface charged thin films considering the energetic distribution of the localised states within the sheet. A non- linear differential equation with suitable boundary and initial conditions describes the time evolution of the space charge. We suppose a Gaussian distribution of energies for the carrier transporting states with a standard deviation s. The arrival time of carriers at the rear electrode of the sandwich sample is studied in dependence on film thickness, initial surface charge, and energetic disorder. Our calculations confirm that the transit time increases indirect proportional with initial surface charge and proportional with the square thickness. For standard deviations of energetic distribution of 0.05 eV up to 0.25 eV the normalised transit time grows as s1.44. We discuss this in terms of the stochastic transport model.
