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Organic-inorganic hybrids based on P3HT and mesoporous silicon for thermoelectric applications
(2024)
This thesis presents a comprehensive study on synthesis, structure and thermoelectric transport properties of organic-inorganic hybrids based on P3HT and porous silicon. The effect of embedding polymer in silicon pores on the electrical and thermal transport is studied. Morphological studies confirm successful polymer infiltration and diffusion doping with roughly 50% of the pore space occupied by conjugated polymer. Synchrotron diffraction experiments reveal no specific ordering of the polymer inside the pores. P3HT-pSi hybrids show improved electrical transport by five orders of magnitude compared to porous silicon and power factor values comparable or exceeding other P3HT-inorganic hybrids. The analysis suggests different transport mechanisms in both materials. In pSi, the transport mechanism relates to a Meyer-Neldel compansation rule. The analysis of hybrids' data using the power law in Kang-Snyder model suggests that a doped polymer mainly provides charge carriers to the pSi matrix, similar to the behavior of a doped semiconductor. Heavily suppressed thermal transport in porous silicon is treated with a modified Landauer/Lundstrom model and effective medium theories, which reveal that pSi agrees well with the Kirkpatrick model with a 68% percolation threshold. Thermal conductivities of hybrids show an increase compared to the empty pSi but the overall thermoelectric figure of merit ZT of P3HT-pSi hybrid exceeds both pSi and P3HT as well as bulk Si.
This thesis discusses heat and charge transport phenomena in single-crystalline Silicon penetrated by nanometer-sized pores, known as mesoporous Silicon (pSi). Despite the extensive attention given to it as a thermoelectric material of interest, studies on microscopic thermal and electronic transport beyond its macroscopic characterizations are rarely reported. In contrast, this work reports the interplay of both.
PSi samples synthesized by electrochemical anodization display a temperature dependence of specific heat ๐ถ๐ that deviates from the characteristic ๐^3 behaviour (at ๐<50๐พ). A thorough analysis reveals that both 3D and 2D Einstein and Debye modes contribute to this specific heat. Additional 2D Einstein modes (~3 ๐๐๐) agree reasonably well with the boson peak of SiO2 in pSi pore walls. 2D Debye modes are proposed to account for surface acoustic modes causing a significant deviation from the well-known ๐^3 dependence of ๐ถ๐ at ๐<50๐พ.
A novel theoretical model gives insights into the thermal conductivity of pSi in terms of porosity and phonon scattering on the nanoscale. The thermal conductivity analysis utilizes the peculiarities of the pSi phonon dispersion probed by the inelastic neutron scattering experiments. A phonon mean-free path of around 10 ๐๐ extracted from the presented model is proposed to cause the reduced thermal conductivity of pSi by two orders of magnitude compared to p-doped bulk Silicon. Detailed analysis indicates that compound averaging may cause a further 10-50% reduction. The percolation threshold of 65% for thermal conductivity of pSi samples is subsequently determined by employing theoretical effective medium models.
Temperature-dependent electrical conductivity measurements reveal a thermally activated transport process. A detailed analysis of the activation energy ๐ธ๐ด๐ in the thermally activated transport exhibits a Meyer Neldel compensation rule between different samples that originates in multi-phonon absorption upon carrier transport. Activation energies ๐ธ๐ด๐ obtained from temperature-dependent thermopower measurements provide further evidence for multi-phonon assisted hopping between localized states as a dominant charge transport mechanism in pSi, as they systematically differ from the determined ๐ธ๐ด๐ values.