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Films of emeraldine base of polyaniline (PAni) doped by various transition metal salts have been prepared, and current-voltage characteristics of the indium-tin oxide (ITO)/PAni film/metal electrode heterostructures were investigated. It was found that the electrical characteristics of the heterostructures are greatly affected by the dopant used and the metal electrode used. Different dopants resulted in different current anomalies with asymmetric current-voltage characteristics. Depending on the dopant used, the exponential and power law of the current behavior can be distinguished. Depending on the metal electrode used, two different regimes of current passing have been found at low applied voltages, namely, a nearly ohmic regime for the indium electrode, and a diode regime for the aluminum electrode. The diode regime was found to accompany by a positive charge accumulation in the film near the film/metal interface, which creates a built-in potential in the film. The amount of positive charges accumulated at the interface and therefore the value of the built-in potential can be reversibly increased or reduced by successive runs of the applied voltage in the forward or reverse direction, respectively. (C) 2004 Elsevier B.V. All rights reserved
The photoalignment ability of poly[methyl(phenyl)silylene] (PMPSi) films makes it possible to use them as hole- transporting substrates for the preparation of organic oriented films. A PMPSi layer prepared by spin coating was irradiated, after drying, with linearly polarized UV light. Then, water-soluble hydroxyaluminium phthalocyaninesulfonate [Al(OH)Pc(SO3Na)(1-2)] was deposited by casting. The cell ITO/PMPSi/AI(OH)Pc(SO3Na)(1-2)/Al showed non-linear current- voltage characteristics. For applied voltages higher than 10 V, polarized electroluminescence was observed. Its spectral characteristic consisted of two peaks with maxima at about 320 and 700 nm; their polarized anisotropies R-EL = Phi(parallel to) / Phi(perpendicular to) were ca. 15 and 0.5, respectively
Lead island films were obtained via vacuum vapor deposition on glass and ceramic substrates at 80 K. Electrical conductance was measured during vapor condensation and further annealing of the film up to room temperature. The resistance behavior during film formation and atomic force microscopy of annealed films were used as information sources about their structure. A model for the quenched growth, based on ballistic aggregation theory, was proposed. The nanostructure, responsible for chemiresistive properties of thin lead films and the mechanism of sensor response are discussed. (C) 2003 Elsevier B.V. All rights reserved