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Recently, two different groups have reported independently that the mobility of field-effect transistors made from regioregular poly(3-hexylthiophene) (P3HT) increases strongly with molecular weight. Two different models were presented: one proposing carrier trapping at grain boundaries and the second putting emphasis on the conformation and packing of the polymer chains in the thin layers for different molecular weights. Here, we present the results of detailed investigations of powders and thin films of deuterated P3HT fractions with different molecular weight. For powder samples, gel permeation chromatography (GPC), differential scanning calorimetry (DSC), and X-ray diffraction (XRD) were used to investigate the structure and crystallization behavior of the polymers. The GPC investigations show that all weight fractions possess a rather broad molecular weight distribution. DSC measurements reveal a strong decrease of the crystallization temperature and, most important, a significant decrease of the degree of crystallinity with decreasing molecular weight. To study the structure of thin layers in lateral and vertical directions, both transmission electron microscopy (TEM) and X-ray grazing incidence diffraction (GID) were utilized. These methods show that thin layers of the low molecular weight fraction consist of well-defined crystalline domains embedded in a disordered matrix. We propose that the transport properties of layers prepared from fractions of poly(3-hexylthiophene) with different molecular weight are largely determined by the crystallinity of the samples and not by the perfection of the packing of the chains in the individual crystallites
Bimodal temperature behavior of structure and mobility in high molecular weight p3ht thin films
(2009)
We report a temperature dependent crystalline structure of spin-coated thin films of high molecular weight regioregular poly(3-hexylthiophene) (P3HT) (M-n similar to 30000 g/mol) and its correlation with charge carrier mobility. These investigations show a reversible change of the crystalline structure, where the interlayer lattice spacing (100)along the alkyl side chains continuously increases up to a temperature of about 220 degrees C; in contrast, the in-plane pi-pi distance reduces with increasing temperature. These changes in structure are reversible and can be repeated several times. The temperature-induced structural properties differ for thick and thin films, pointing to a surface/interface role in stabilization of the layer morphology. In contrast to the structural changes, the carrier mobility is rather constant in the temperature range from room temperature up to 100-120 degrees C, followed by a continuous decrease. For thick layers this drop is significant and the transistor performance almost vanishes at high temperature, however, it completely recovers upon cooling back to roorn temperature. The drop of the charge carrier mobility at higher temperatures is in contrast with expectations front the structural studies, considering the increase of crystalline fraction of the polycrystalline layer. our electrical measurements Underscore that the reduction of the macroscopic mobility is mostly caused by it pronounced decrease of the intergrain transport. The thermally induced crystallization along(100) direction and the creation of numerous small crystallites at the film-substrate interface reduce the number of long polymer chain, bridging crystalline domains, which ultimately limits the macroscopic charge transport.
The construction of a low-cost potentiostat and an electrochemical cell are described. Both have been used for the potentiostatic deposition of conducting polymers on FTO-coated glass. According to a reported procedure from literature an electrochromic window has been prepared and tested. Furthermore a novel window containing an additional electrodeposited polymer layer that shows a more pronounced electrochromism than the literature example is described for the first time. The required chemicals are inexpensive as well as the entire electrochemical equipment.
A series of novel arylene ladder polymers incorporating conjugated 1,5- and 2,6-naphthylene building blocks were synthesized. The polyketone ladder polymer precursors were prepared via a palladium-mediated Suzuki-type cross- coupling reaction using both conventional and microwave heating. While the 2,6-naphthylene polyketone precursor (2,6- NPK) was accessible from both heating protocols. the 1,5-naphthylene linked polyketones were only accessible via microwave-assisted (uW) procedures. and the polymer 1,5-NLP2 is the first example of a ladder polymer consisting exclusively of alternating six-membered rings prepared from this reaction sequence. The solution optical spectra of the final naphthylene ladder polymers exhibit the characteristic spectral shapes with a steep absorption edge and a vibronic fine structure common to fully rigidified ladder structures. The structural modification of the substitution pattern and the linkage positions at the naphthylene unit allows some tuning of the absorption and emission bands of the ladder polymers. The 2,6-naphthylene derivative exhibits an intense blue photoluminescence, while the two 1,5-naphthylene- linked ladder polymers exhibit a red shift of the 0-0 electronic transitions, leading to a blue-green photoluminescence
Persistent and transient hole-burning (HB) at 4.2 K have been applied to study the intrinsic properties of electronic excitations of a ladder type pi-conjugated poly(para-phenylene) in solutions. A narrow spectral hole less than I meV wide has been detected. The dependencies of the HB efficiency on the burn dose and wavelength, on doping the samples by electron scavenger are interpreted in terms of a photo reaction related to the two-level systems - specific low energy excitations in amorphous materials. In transient HB an additional hole broadening was observed which stems from the triplet energy transfer under conditions of lack of correlation of site energies of the singlet and triplet states of chromophores. (C) 2003 Elsevier B.V. All rights reserved
The effect of oxygen plasma treatment and/or silanization with hexamethyldisilazane (HMDS) on the surface chemistry and the morphology of the SiO2-gate insulator were studied with respect to the performance of organic field effect transistors. Using X-ray photoelectron spectroscopy (XPS), it is shown that silanization leads to the growth of a polysiloxane interfacial layer and that longer silanization times increase the thickness of this layer. Most important, silanization reduces the signal from surface contaminations such as oxidized hydrocarbon molecules. In fact, the lowest concentration of these contaminations was found after a combined oxygen plasma/silanization treatment. The results of these investigations were correlated with the characteristic device parameters of polymer field effect transistors with poly(3-hexylthiophene)s as the semiconducting layer. We found that the field effect mobility correlates with the concentration of contaminations as measured by XPS. We, finally, demonstrate that silanization significantly improves the operational stability of the device in air compared to the untreated devices
The electrical conductivity of organic semiconductors can be enhanced by orders of magnitude via doping with strong molecular electron acceptors or donors. Ground-state integer charge transfer and charge-transfer complex formation between organic semiconductors and molecular dopants have been suggested as the microscopic mechanisms causing these profound changes in electrical materials properties. Here, we study charge-transfer interactions between the common molecular p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and a systematic series of thiophene-based copolymers by a combination of spectroscopic techniques and electrical measurements. Subtle variations in chemical structure are seen to significantly impact the nature of the charge-transfer species and the efficiency of the doping process, underlining the need for a more detailed understanding of the microscopic doping mechanism in organic semiconductors to reliably guide targeted chemical design.