Energy-dispersive X-ray reflectivity and GID for real-time growth studies of pentacene thin films
- We use energy-dispersive X-ray reflectivity and grazing incidence diffraction (GID) to follow the growth of the crystalline organic semiconductor pentacene on silicon oxide in-situ and in real-time. The technique allows for monitoring Bragg reflections and measuring X-ray growth oscillations with a time resolution of 1 min in a wide q-range in reciprocal space extending over 0.25-0.80 angstrom(-1), i.e. sampling a large number of Fourier components simultaneously. A quantitative analysis of growth oscillations at several q-points yields the evolution of the surface roughness, showing a marked transition from layer-by-layer growth to strong roughening after four monolayers of pentacene have been deposited. (c) 2006 Elsevier B.V. All rights reserved.
| Author details: | Stefan Kowarik, Andreas Gerlach, Wolfram LeitenbergerGND, Witte Hu J, Christoph Wöll, Frank Schreiber |
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| URL: | http://www.sciencedirect.com/science/journal/00406090 |
| DOI: | https://doi.org/10.1016/j.tsf.2006.12.020 |
| ISSN: | 0040-6090 |
| Publication type: | Article |
| Language: | English |
| Year of first publication: | 2007 |
| Publication year: | 2007 |
| Release date: | 2017/03/24 |
| Source: | Thin solid films. - ISSN 0040-6090. - 515 (2007), 14, S. 5606 - 5610 |
| Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
| Institution name at the time of the publication: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik |
