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Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon

  • The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z(95) of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) - inorganic (SiO2/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPSThe analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z(95) of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) - inorganic (SiO2/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS. (C) 2015 Elsevier B.V. All rights reserved.zeige mehrzeige weniger

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Metadaten
Verfasserangaben:Paul M. Dietrich, Stephan Glamsch, Christopher EhlertORCiDGND, Andreas Lippitz, Nora Kulak, Wolfgang E. S. UngerORCiD
DOI:https://doi.org/10.1016/j.apsusc.2015.12.052
ISSN:0169-4332
ISSN:1873-5584
Titel des übergeordneten Werks (Englisch):Applied surface science : a journal devoted to applied physics and chemistry of surfaces and interfaces
Verlag:Elsevier
Verlagsort:Amsterdam
Publikationstyp:Wissenschaftlicher Artikel
Sprache:Englisch
Jahr der Erstveröffentlichung:2016
Erscheinungsjahr:2016
Datum der Freischaltung:22.03.2020
Freies Schlagwort / Tag:Amides; Amines; Depth profiling; Monolayer; Silanes; Synchrotron radiation XPS
Band:363
Seitenanzahl:6
Erste Seite:406
Letzte Seite:411
Fördernde Institution:European Union through the European Metrology Research Program (EMRP); EMRP participating countries within EURAMET; European Union
Organisationseinheiten:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Chemie
Peer Review:Referiert
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