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Study of thin films made from aromatic polyamides with silicon and phenylquinoxaline rings in the main chain

  • Aromatic polyamides containing silicon and phenylquinoxaline rings in the main chain have been prepared by polycondensation reaction of a silicon-containing diacid chloride, namely bis(p-chlorocarbonylphenyl) -diphenylsilane, with various aromatic diamines having preformed phenylquinoxaline units. These polymers were easily soluble in polar aprotic solvents, such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF), and in tetrahydrofurane. They showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 253-304°C. Polymer solutions in NMP were processed into thin films having the thickness of tens of nanometer to 10 mm, by spin-coating onto glass plates or silicon wafers. The films had strong adhesion to substrates and exhibited very smooth surfaces, free of pinholes, in atomic force microscopy (AFM) studies. The free-standing films had dielectric constant in the range of 3.48-3.69. Thermal treatment of the films up to 350°C rendered them completely insolubleAromatic polyamides containing silicon and phenylquinoxaline rings in the main chain have been prepared by polycondensation reaction of a silicon-containing diacid chloride, namely bis(p-chlorocarbonylphenyl) -diphenylsilane, with various aromatic diamines having preformed phenylquinoxaline units. These polymers were easily soluble in polar aprotic solvents, such as N-methylpyrrolidinone (NMP) and dimethylformamide (DMF), and in tetrahydrofurane. They showed high thermal stability with decomposition temperature being above 450°C and glass transition temperature in the range of 253-304°C. Polymer solutions in NMP were processed into thin films having the thickness of tens of nanometer to 10 mm, by spin-coating onto glass plates or silicon wafers. The films had strong adhesion to substrates and exhibited very smooth surfaces, free of pinholes, in atomic force microscopy (AFM) studies. The free-standing films had dielectric constant in the range of 3.48-3.69. Thermal treatment of the films up to 350°C rendered them completely insoluble in organic solvents, while maintaining their smoothness and strong adhesion to the silicon substrate, and with no Tg in DSC experiments. Their FTIR spectra did not show any changes compared to the untreated films, meaning that polymers maintain their structural integrity at high temperature. Ó 1999 Elsevier Science S.A. All rights reserved.zeige mehrzeige weniger

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Metadaten
Verfasserangaben:Maria Bruma, Burkhard SchulzORCiDGND, Thomas Köpnick, Burkhard Stiller, Frank W. Mercer
Publikationstyp:Wissenschaftlicher Artikel
Sprache:Englisch
Jahr der Erstveröffentlichung:1999
Erscheinungsjahr:1999
Datum der Freischaltung:24.03.2017
Quelle:Materials science and engineering / C. - 7 (1999), 8/9, S. 361 - 371
Organisationseinheiten:Zentrale und wissenschaftliche Einrichtungen / Interdisziplinäres Zentrum für Dünne Organische und Biochemische Schichten
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