TY - JOUR A1 - Crovetto, Andrea A1 - Hempel, Hannes A1 - Rusu, Marin A1 - Choubrac, Leo A1 - Kojda, Sandrino Danny A1 - Habicht, Klaus A1 - Unold, Thomas T1 - Water adsorption enhances electrical conductivity in transparent p-type CuI JF - ACS applied materials & interfaces N2 - CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a 2-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 h, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. On the basis of the large intragrain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility. KW - transparent conductors KW - CuI KW - copper iodide KW - conductivity KW - humidity KW - p-type KW - work function Y1 - 2020 U6 - https://doi.org/10.1021/acsami.0c11040 SN - 1944-8244 SN - 1944-8252 VL - 12 IS - 43 SP - 48741 EP - 48747 PB - American Chemical Society CY - Washington, DC ER - TY - JOUR A1 - Pena-Camargo, Francisco A1 - Thiesbrummel, Jarla A1 - Hempel, Hannes A1 - Musiienko, Artem A1 - Le Corre, Vincent M. A1 - Diekmann, Jonas A1 - Warby, Jonathan A1 - Unold, Thomas A1 - Lang, Felix A1 - Neher, Dieter A1 - Stolterfoht, Martin T1 - Revealing the doping density in perovskite solar cells and its impact on device performance JF - Applied physics reviews N2 - Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterization techniques, comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the electrode charge per cell volume under short-circuit conditions ( CUbi/eV), which amounts to roughly 10(16) cm(-3). This figure of merit represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results consistently demonstrate that the doping density is below this critical threshold 10(12) cm(-3), which means << CUbi / e V) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations, which confirm that the device performance is not affected by such low doping densities. Y1 - 2022 U6 - https://doi.org/10.1063/5.0085286 SN - 1931-9401 VL - 9 IS - 2 PB - AIP Publishing CY - Melville ER - TY - JOUR A1 - Warby, Jonathan A1 - Zu, Fengshuo A1 - Zeiske, Stefan A1 - Gutierrez-Partida, Emilio A1 - Frohloff, Lennart A1 - Kahmann, Simon A1 - Frohna, Kyle A1 - Mosconi, Edoardo A1 - Radicchi, Eros A1 - Lang, Felix A1 - Shah, Sahil A1 - Pena-Camargo, Francisco A1 - Hempel, Hannes A1 - Unold, Thomas A1 - Koch, Norbert A1 - Armin, Ardalan A1 - De Angelis, Filippo A1 - Stranks, Samuel D. A1 - Neher, Dieter A1 - Stolterfoht, Martin T1 - Understanding performance limiting interfacial recombination in pin Perovskite solar cells JF - Advanced energy materials N2 - Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto-electronic properties and their successful integration into multijunction cells. However, the performance of single- and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C-60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first-principle numerical simulations. It is found that the most significant contribution to the total C-60-induced recombination loss occurs within the first monolayer of C-60, rather than in the bulk of C-60 or at the perovskite surface. The experiments show that the C-60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C-60, the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells. KW - C60 KW - defects KW - interface recombination KW - loss mechanisms KW - perovskites KW - solar cells Y1 - 2022 U6 - https://doi.org/10.1002/aenm.202103567 SN - 1614-6832 SN - 1614-6840 VL - 12 IS - 12 PB - Wiley-VCH CY - Weinheim ER -