TY - JOUR A1 - Crovetto, Andrea A1 - Hempel, Hannes A1 - Rusu, Marin A1 - Choubrac, Leo A1 - Kojda, Sandrino Danny A1 - Habicht, Klaus A1 - Unold, Thomas T1 - Water adsorption enhances electrical conductivity in transparent p-type CuI JF - ACS applied materials & interfaces N2 - CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a 2-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 h, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. On the basis of the large intragrain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility. KW - transparent conductors KW - CuI KW - copper iodide KW - conductivity KW - humidity KW - p-type KW - work function Y1 - 2020 U6 - https://doi.org/10.1021/acsami.0c11040 SN - 1944-8244 SN - 1944-8252 VL - 12 IS - 43 SP - 48741 EP - 48747 PB - American Chemical Society CY - Washington, DC ER - TY - JOUR A1 - Crovetto, Andrea A1 - Kojda, Danny A1 - Yi, Feng A1 - Heinselman, Karen N. A1 - LaVan, David A. A1 - Habicht, Klaus A1 - Unold, Thomas A1 - Zakutayev, Andriy T1 - Crystallize It before It diffuses BT - kinetic stabilization of thin-film phosphorus-rich semiconductor CuP2 JF - Journal of the american chemical society N2 - Numerous phosphorus-rich metal phosphides containing both P-P bonds and metal-P bonds are known from the solid-state chemistry literature. A method to grow these materials in thin-film form would be desirable, as thin films are required in many applications and they are an ideal platform for high-throughput studies. In addition, the high density and smooth surfaces achievable in thin films are a significant advantage for characterization of transport and optical properties. Despite these benefits, there is hardly any published work on even the simplest binary phosphorus-rich phosphide films. Here, we demonstrate growth of single-phase CuP2 films by a two-step process involving reactive sputtering of amorphous CuP2+x and rapid annealing in an inert atmosphere. At the crystallization temperature, CuP2 is thermodynamically unstable with respect to Cu3P and P-4. However, CuP2 can be stabilized if the amorphous precursors are mixed on the atomic scale and are sufficiently close to the desired composition (neither too P poor nor too P rich). Fast formation of polycrystalline CuP2, combined with a short annealing time, makes it possible to bypass the diffusion processes responsible for decomposition. We find that thin-film CuP2 is a 1.5 eV band gap semiconductor with interesting properties, such as a high optical absorption coefficient (above 10(5) cm(-1)), low thermal conductivity (1.1 W/(K m)), and composition-insensitive electrical conductivity (around 1 S/cm). We anticipate that our processing route can be extended to other phosphorus-rich phosphides that are still awaiting thin-film synthesis and will lead to a more complete understanding of these materials and of their potential applications. Y1 - 2022 U6 - https://doi.org/10.1021/jacs.2c04868 SN - 0002-7863 SN - 1520-5126 VL - 144 IS - 29 SP - 13334 EP - 13343 PB - American Chemical Society CY - Washington ER -