TY  - JOUR
A1  - Kegelmann, Lukas
A1  - Tockhorn, Philipp
A1  - Wolff, Christian Michael
A1  - Márquez, José A.
A1  - Caicedo Dávila, Sebastián
A1  - Korte, Lars
A1  - Unold, Thomas
A1  - Loevenich, Wilfried
A1  - Neher, Dieter
A1  - Rech, Bernd
A1  - Albrecht, Steve
T1  - Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells
JF  - ACS applied materials & interfaces
N2  - Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.
KW  - perovskite solar cell
KW  - selective contact
KW  - spiro-OMeTAD
KW  - PEDOT
KW  - recombination
KW  - passivation
KW  - quasi-Fermi level splitting
Y1  - 2019
U6  - https://doi.org/10.1021/acsami.9b01332
SN  - 1944-8244
SN  - 1944-8252
VL  - 11
IS  - 9
SP  - 9172
EP  - 9181
PB  - American Chemical Society
CY  - Washington
ER  - 
TY  - JOUR
A1  - Pisoni, Stefano
A1  - Stolterfoht, Martin
A1  - Lockinger, Johannes
A1  - Moser, Thierry
A1  - Jiang, Yan
A1  - Caprioglio, Pietro
A1  - Neher, Dieter
A1  - Buecheler, Stephan
A1  - Tiwari, Ayodhya N.
T1  - On the origin of open-circuit voltage losses in flexible n-i-p perovskite solar cells
JF  - Science and technology of advanced materials : STAM
N2  - The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C-60 as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH3NH3PbI3 perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from similar to 1.23 eV for the bare absorber, just similar to 90 meV below the radiative limit, to similar to 1.10 eV when C-60 is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of similar to 30-40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure. [GRAPHICS] .
KW  - Perovskite solar cell
KW  - flexible
KW  - interface engineering
KW  - non-radiative recombination
KW  - quasi-Fermi level splitting
Y1  - 2019
U6  - https://doi.org/10.1080/14686996.2019.1633952
SN  - 1468-6996
SN  - 1878-5514
VL  - 20
SP  - 786
EP  - 795
PB  - Taylor & Francis
CY  - Abingdon
ER  -