TY - JOUR A1 - Di Pietro, Riccardo A1 - Erdmann, Tim A1 - Carpenter, Joshua H. A1 - Wang, Naixiang A1 - Shivhare, Rishi Ramdas A1 - Formanek, Petr A1 - Heintze, Cornelia A1 - Voit, Brigitte A1 - Neher, Dieter A1 - Ade, Harald W. A1 - Kiriy, Anton T1 - Synthesis of High-Crystallinity DPP Polymers with Balanced Electron and Hole Mobility JF - Chemistry of materials : a publication of the American Chemical Society Y1 - 2017 U6 - https://doi.org/10.1021/acs.chemmater.7b04423 SN - 0897-4756 SN - 1520-5002 VL - 29 SP - 10220 EP - 10232 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Lu, Guanghao A1 - Di Pietro, Riccardo A1 - Kölln, Lisa Sophie A1 - Nasrallah, Iyad A1 - Zhou, Ling A1 - Mollinger, Sonya A1 - Himmelberger, Scott A1 - Koch, Norbert A1 - Salleo, Alberto A1 - Neher, Dieter T1 - Dual-Characteristic Transistors Based on Semiconducting Polymer Blends JF - Advanced electronic materials N2 - A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3–0.4 V dec−1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances. KW - charge accumulation KW - crystalline ordering KW - field-effect-transistor KW - semiconducting polymers Y1 - 2016 U6 - https://doi.org/10.1002/aelm.201600267 SN - 2199-160X VL - 2 SP - 2344 EP - 2351 PB - Wiley-Blackwell CY - Hoboken ER - TY - JOUR A1 - Di Pietro, Riccardo A1 - Nasrallah, Iyad A1 - Carpenter, Joshua A1 - Gann, Eliot A1 - Kölln, Lisa Sophie A1 - Thomsen, Lars A1 - Venkateshvaran, Deepak A1 - Sadhanala, Aditya A1 - Chabinyc, Michael A1 - McNeill, Christopher R. A1 - Facchetti, Antonio A1 - Ade, Harald W. A1 - Sirringhaus, Henning A1 - Neher, Dieter T1 - Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors JF - Advanced functional materials Y1 - 2016 U6 - https://doi.org/10.1002/adfm.201602080 SN - 1616-301X SN - 1616-3028 VL - 26 SP - 8011 EP - 8022 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Steyrleuthner, Robert A1 - Di Pietro, Riccardo A1 - Collins, Brian A. A1 - Polzer, Frank A1 - Himmelberger, Scott A1 - Schubert, Marcel A1 - Chen, Zhihua A1 - Zhang, Shiming A1 - Salleo, Alberto A1 - Ade, Harald W. A1 - Facchetti, Antonio A1 - Neher, Dieter T1 - The Role of Regioregularity, Crystallinity, and Chain Orientation on Electron Transport in a High-Mobility n-Type Copolymer JF - Journal of the American Chemical Society Y1 - 2014 U6 - https://doi.org/10.1021/ja4118736 SN - 0002-7863 VL - 136 IS - 11 SP - 4245 EP - 4256 PB - American Chemical Society CY - Washington ER - TY - JOUR A1 - Tremel, Kim A1 - Fischer, Florian S. U. A1 - Kayunkid, Navaphun A1 - Di Pietro, Riccardo A1 - Tkachov, Roman A1 - Kiriy, Anton A1 - Neher, Dieter A1 - Ludwigs, Sabine A1 - Brinkmann, Martin T1 - Charge transport anisotropy in highly oriented thin films of the acceptor polymer P(NDI2OD-T2) JF - dvanced energy materials N2 - The nanomorphology of the high mobility polymer poly{[N,N'-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} P(NDI2OD-T2) in thin films is explored as a function of different annealing conditions and correlated to optical and electrical properties. While nanofibrils with face-on orientation in form I are obtained directly after spin-coating and annealing below the melt transition temperature, clear evidence of lamellar structures is found after melt-annealing followed by slow cooling to room temperature. Interestingly these structural changes are accompanied by distinct changes in the absorption patterns. Electron diffraction measurements further show clear transitions towards predominant edge-on oriented chains in form II upon melt-annealing. Large-scale alignment with dichroic ratios up to 10 and improved order is achieved by high temperature rubbing and subsequent post-rubbing annealing. These highly oriented morphologies allow anisotropic in-plane charge transport to be probed with top-gate transistors parallel and perpendicular to the polymer chain direction. Mobilities up to 0.1 cm(2) V-1 s(-1) are observed parallel to the polymer chain, which is up to 10 times higher than those perpendicular to the polymer chain. Y1 - 2014 U6 - https://doi.org/10.1002/aenm.201301659 SN - 1614-6832 SN - 1614-6840 VL - 4 IS - 10 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Di Pietro, Riccardo A1 - Venkateshvaran, Deepak A1 - Klug, Andreas A1 - List-Kratochvil, Emil J. W. A1 - Facchetti, Antonio A1 - Sirringhaus, Henning A1 - Neher, Dieter T1 - Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors JF - Applied physics letters N2 - A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials. (C) 2014 AIP Publishing LLC. Y1 - 2014 U6 - https://doi.org/10.1063/1.4876057 SN - 0003-6951 SN - 1077-3118 VL - 104 IS - 19 PB - American Institute of Physics CY - Melville ER - TY - JOUR A1 - Lu, Guanghao A1 - Blakesley, James C. A1 - Himmelberger, Scott A1 - Pingel, Patrick A1 - Frisch, Johannes A1 - Lieberwirth, Ingo A1 - Salzmann, Ingo A1 - Oehzelt, Martin A1 - Di Pietro, Riccardo A1 - Salleo, Alberto A1 - Koch, Norbert A1 - Neher, Dieter T1 - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors JF - Nature Communications N2 - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60. Y1 - 2013 U6 - https://doi.org/10.1038/ncomms2587 SN - 2041-1723 VL - 4 IS - 1-2 PB - Nature Publ. Group CY - London ER -