@article{ZhangHosseiniGunderetal.2019,
  author    = {Zhang, Shanshan and Hosseini, Seyed Mehrdad and Gunder, Rene and Petsiuk, Andrei and Caprioglio, Pietro and Wolff, Christian Michael and Shoaee, Safa and Meredith, Paul and Schorr, Susan and Unold, Thomas and Burn, Paul L. and Neher, Dieter and Stolterfoht, Martin},
  title     = {The Role of Bulk and Interface Recombination in High-Efficiency Low-Dimensional Perovskite Solar Cells},
  series = {Advanced materials},
  volume    = {31},
  journal   = {Advanced materials},
  number    = {30},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {0935-9648},
  doi       = {10.1002/adma.201901090},
  pages     = {11},
  year      = {2019},
  abstract  = {2D Ruddlesden-Popper perovskite (RPP) solar cells have excellent environmental stability. However, the power conversion efficiency (PCE) of RPP cells remains inferior to 3D perovskite-based cells. Herein, 2D (CH3(CH2)(3)NH3)(2)(CH3NH3)(n-1)PbnI3n+1 perovskite cells with different numbers of [PbI6](4-) sheets (n = 2-4) are analyzed. Photoluminescence quantum yield (PLQY) measurements show that nonradiative open-circuit voltage (V-OC) losses outweigh radiative losses in materials with n > 2. The n = 3 and n = 4 films exhibit a higher PLQY than the standard 3D methylammonium lead iodide perovskite although this is accompanied by increased interfacial recombination at the top perovskite/C-60 interface. This tradeoff results in a similar PLQY in all devices, including the n = 2 system where the perovskite bulk dominates the recombination properties of the cell. In most cases the quasi-Fermi level splitting matches the device V-OC within 20 meV, which indicates minimal recombination losses at the metal contacts. The results show that poor charge transport rather than exciton dissociation is the primary reason for the reduction in fill factor of the RPP devices. Optimized n = 4 RPP solar cells had PCEs of 13\% with significant potential for further improvements.},
  language  = {en}
}
@article{LehmannFranzToebbensetal.2019,
  author    = {Lehmann, Frederike and Franz, Alexandra and Toebbens, Daniel M. and Levcenco, Sergej and Unold, Thomas and Taubert, Andreas and Schorr, Susan},
  title     = {The phase diagram of a mixed halide (Br, I) hybrid perovskite obtained by synchrotron X-ray diffraction},
  series = {RSC Advances},
  volume    = {9},
  journal   = {RSC Advances},
  number    = {20},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {2046-2069},
  doi       = {10.1039/c8ra09398a},
  pages     = {11151 -- 11159},
  year      = {2019},
  abstract  = {By using synchrotron X-ray powder diffraction, the temperature dependent phase diagram of the hybrid perovskite tri-halide compounds, methyl ammonium lead iodide (MAPbI3, MA+ = CH3NH3+) and methyl ammonium lead bromide (MAPbBr3), as well as of their solid solutions, has been established. The existence of a large miscibility gap between 0.29 ≤ x ≤ 0.92 (±0.02) for the MAPb(I1-xBrx)3 solid solution has been proven. A systematic study of the lattice parameters for the solid solution series at room temperature revealed distinct deviations from Vegard's law. Furthermore, temperature dependent measurements showed that a strong temperature dependency of lattice parameters from the composition is present for iodine rich compositions. In contrast, the bromine rich compositions show an unusually low dependency of the phase transition temperature from the degree of substitution.},
  language  = {en}
}
@article{StolterfohtCaprioglioWolffetal.2019,
  author    = {Stolterfoht, Martin and Caprioglio, Pietro and Wolff, Christian Michael and Marquez, Jose A. and Nordmann, Joleik and Zhang, Shanshan and Rothhardt, Daniel and H{\"o}rmann, Ulrich and Amir, Yohai and Redinger, Alex and Kegelmann, Lukas and Zu, Fengshuo and Albrecht, Steve and Koch, Norbert and Kirchartz, Thomas and Saliba, Michael and Unold, Thomas and Neher, Dieter},
  title     = {The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells},
  series = {Energy \& environmental science},
  volume    = {12},
  journal   = {Energy \& environmental science},
  number    = {9},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {1754-5692},
  doi       = {10.1039/c9ee02020a},
  pages     = {2778 -- 2788},
  year      = {2019},
  abstract  = {Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V-OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the photoluminescence yield of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination currents in pin- and nip-type cells including high efficiency devices (21.4\%). Our study comprises a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V-OC by inducing an additional non-radiative recombination current that is in most cases substantially larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V-OC of the device. Importantly, the V-OC equals the internal quasi-Fermi level splitting (QFLS) in the absorber layer only in high efficiency cells, while in poor performing devices, the V-OC is substantially lower than the QFLS. Using ultraviolet photoelectron spectroscopy and differential charging capacitance experiments we show that this is due to an energy level mis-alignment at the p-interface. The findings are corroborated by rigorous device simulations which outline important considerations to maximize the V-OC. This work highlights that the challenge to suppress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in proper energy level alignment and in suppression of defect recombination at the interfaces.},
  language  = {en}
}
@misc{CaprioglioStolterfohtWolffetal.2019,
  author    = {Caprioglio, Pietro and Stolterfoht, Martin and Wolff, Christian Michael and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {On the relation between the open-circuit voltage and quasi-Fermi level splitting in efficient perovskite solar cells},
  series = {Postprints der Universit{\"a}t Potsdam Mathematisch-Naturwissenschaftliche Reihe},
  journal   = {Postprints der Universit{\"a}t Potsdam Mathematisch-Naturwissenschaftliche Reihe},
  number    = {774},
  issn      = {1866-8372},
  doi       = {10.25932/publishup-43759},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-437595},
  pages     = {10},
  year      = {2019},
  abstract  = {Today's perovskite solar cells (PSCs) are limited mainly by their open-circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity-dependent measurements of the quasi-Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin-type PSCs with efficiencies above 20\%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley-Queisser theory. This has far-reaching implications for the applicability of some well-established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift-diffusion simulations, the intensity dependence of the QFLS, the QFLS-VOC offset and the ideality factor are consistently explained by trap-assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS-VOC relation is of great importance.},
  language  = {en}
}
@article{CaprioglioStolterfohtWolffetal.2019,
  author    = {Caprioglio, Pietro and Stolterfoht, Martin and Wolff, Christian Michael and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {On the relation between the open-circuit voltage and quasi-fermi level splitting in efficient perovskite solar cells},
  series = {advanced energy materials},
  volume    = {9},
  journal   = {advanced energy materials},
  number    = {33},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1614-6832},
  doi       = {10.1002/aenm.201901631},
  pages     = {10},
  year      = {2019},
  abstract  = {Today's perovskite solar cells (PSCs) are limited mainly by their open-circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity-dependent measurements of the quasi-Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin-type PSCs with efficiencies above 20\%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley-Queisser theory. This has far-reaching implications for the applicability of some well-established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift-diffusion simulations, the intensity dependence of the QFLS, the QFLS-VOC offset and the ideality factor are consistently explained by trap-assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS-VOC relation is of great importance.},
  language  = {en}
}
@article{KegelmannTockhornWolffetal.2019,
  author    = {Kegelmann, Lukas and Tockhorn, Philipp and Wolff, Christian Michael and M{\´a}rquez, Jos{\´e} A. and Caicedo D{\´a}vila, Sebasti{\´a}n and Korte, Lars and Unold, Thomas and Loevenich, Wilfried and Neher, Dieter and Rech, Bernd and Albrecht, Steve},
  title     = {Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells},
  series = {ACS applied materials \& interfaces},
  volume    = {11},
  journal   = {ACS applied materials \& interfaces},
  number    = {9},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1944-8244},
  doi       = {10.1021/acsami.9b01332},
  pages     = {9172 -- 9181},
  year      = {2019},
  abstract  = {Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22\%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7\% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.},
  language  = {en}
}
@article{CaprioglioZuWolffetal.2019,
  author    = {Caprioglio, Pietro and Zu, Fengshuo and Wolff, Christian Michael and Prieto, Jose A. Marquez and Stolterfoht, Martin and Becker, Pascal and Koch, Norbert and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {High open circuit voltages in pin-type perovskite solar cells through strontium addition},
  series = {Sustainable Energy \& Fuels},
  volume    = {3},
  journal   = {Sustainable Energy \& Fuels},
  number    = {2},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {2398-4902},
  doi       = {10.1039/c8se00509e},
  pages     = {550 -- 563},
  year      = {2019},
  abstract  = {The incorporation of even small amounts of strontium (Sr) into lead-base hybrid quadruple cation perovskite solar cells results in a systematic increase of the open circuit voltage (V-oc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C-60 electron-transporting layer. The resulting solar cells exhibited a V-oc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, reducing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3\%. Our results demonstrate very high V-oc values and efficiencies in Sr-containing quadruple cation perovskite pin-type solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.},
  language  = {en}
}