@article{ZeimerBuggeGramlichetal.2001,
  author    = {Zeimer, Ute and Bugge, F. and Gramlich, S. and Smirnitzki, V. and Weyers, Markus and Tr{\"a}nkle, G. and Grenzer, J{\"o}rg and Pietsch, Ullrich and Cassabois, G. and Emiliani, V. and Linau, Christoph},
  title     = {Evidence of strain-induced lateral carrier confinement in InGaAs-quantum wells by low-temperature near-field spectroscopy},
  year      = {2001},
  language  = {en}
}
@article{ZeimerBuggeGramlichetal.2000,
  author    = {Zeimer, Ute and Bugge, F. and Gramlich, S. and Smirnitzki, V. and Weyers, Markus and Tr{\"a}nkle, G. and Grenzer, J{\"o}rg and Pietsch, Ullrich and Cassabois, G. and Emiliani, V. and Lienau, C.},
  title     = {Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy},
  year      = {2000},
  language  = {en}
}
@article{PietschGrenzerGrigorianetal.2004,
  author    = {Pietsch, Ullrich and Grenzer, J{\"o}rg and Grigorian, Souren A. and Weyers, Markus and Zeimer, Ute and Feranchuk, S. and Fricke, J. and Kissel, H. and Knauer, A. and Tr{\"a}nkle, G.},
  title     = {Nanoengineering of lateral strain-modulation in quantum well heterostructures},
  year      = {2004},
  abstract  = {We have developed a method to design a lateral band-gap modulation in a quantum well heterostructure. The lateral strain variation is induced by patterning of a stressor layer grown on top of a single quantum well which itself is not patterned. The three-dimensional (3D) strain distribution within the lateral nanostructure is calculated using linear elasticity theory applying a finite element technique. Based on the deformation potential approach the calculated strain distribution is translated into a local variation of the band-gap energy. Using a given vertical layer structure we are able to optimize the geometrical parameters to provide a nanostructure with maximum lateral band-gap variation. Experimentally such a structure was realized by etching a surface grating into a tensile-strained InGaP stressor layer grown on top of a compressively strained InGaAs-single quantum well. The achieved 3D strain distribution and the induced band-gap variation are successfully probed by x-ray grazing incidence diffraction and low-temperature photoluminescence measurements, respectively},
  language  = {en}
}
@article{PietschZeimerGrenzeretal.2003,
  author    = {Pietsch, Ullrich and Zeimer, Ute and Grenzer, J{\"o}rg and Grigorian, Souren A. and Fricke, J. and Gramlich, S. and Bugge, F. and Weyers, Markus and Trankle, G.},
  title     = {Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs- nanostructures},
  year      = {2003},
  language  = {en}
}