@article{PingelArvindKoellnetal.2016,
  author    = {Pingel, Patrick and Arvind, Malavika and K{\"o}lln, Lisa and Steyrleuthner, Robert and Kraffert, Felix and Behrends, Jan and Janietz, Silvia and Neher, Dieter},
  title     = {p-Type Doping of Poly(3-hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)borane},
  series = {Advanced electronic materials},
  volume    = {2},
  journal   = {Advanced electronic materials},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {2199-160X},
  doi       = {10.1002/aelm.201600204},
  pages     = {7},
  year      = {2016},
  abstract  = {State-of-the-art p-type doping of organic semiconductors is usually achieved by employing strong -electron acceptors, a prominent example being tetrafluorotetracyanoquinodimethane (F(4)TCNQ). Here, doping of the semiconducting model polymer poly(3-hexylthiophene), P3HT, using the strong Lewis acid tris(pentafluorophenyl)borane (BCF) as a dopant, is investigated by admittance, conductivity, and electron paramagnetic resonance measurements. The electrical characteristics of BCF- and F(4)TCNQ-doped P3HT layers are shown to be very similar in terms of the mobile hole density and the doping efficiency. Roughly 18\% of the employed dopants create mobile holes in either F-4 TCNQ- or BCF-doped P3HT, while the majority of doping-induced holes remain strongly Coulomb-bound to the dopant anions. Despite similar hole densities, conductivity and hole mobility are higher in BCF-doped P3HT layers than in F(4)TCNQ-doped samples. This and the good solubility in many organic solvents render BCF very useful for p-type doping of organic semiconductors.},
  language  = {en}
}
@article{DiPietroNasrallahCarpenteretal.2016,
  author    = {Di Pietro, Riccardo and Nasrallah, Iyad and Carpenter, Joshua and Gann, Eliot and K{\"o}lln, Lisa Sophie and Thomsen, Lars and Venkateshvaran, Deepak and Sadhanala, Aditya and Chabinyc, Michael and McNeill, Christopher R. and Facchetti, Antonio and Ade, Harald W. and Sirringhaus, Henning and Neher, Dieter},
  title     = {Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors},
  series = {Advanced functional materials},
  volume    = {26},
  journal   = {Advanced functional materials},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1616-301X},
  doi       = {10.1002/adfm.201602080},
  pages     = {8011 -- 8022},
  year      = {2016},
  language  = {en}
}
@article{LuDiPietroKoellnetal.2016,
  author    = {Lu, Guanghao and Di Pietro, Riccardo and K{\"o}lln, Lisa Sophie and Nasrallah, Iyad and Zhou, Ling and Mollinger, Sonya and Himmelberger, Scott and Koch, Norbert and Salleo, Alberto and Neher, Dieter},
  title     = {Dual-Characteristic Transistors Based on Semiconducting Polymer Blends},
  series = {Advanced electronic materials},
  volume    = {2},
  journal   = {Advanced electronic materials},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {2199-160X},
  doi       = {10.1002/aelm.201600267},
  pages     = {2344 -- 2351},
  year      = {2016},
  abstract  = {A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3-0.4 V dec\&\#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.},
  language  = {en}
}