@book{ZhangPlauthEberhardtetal.2020,
  author    = {Zhang, Shuhao and Plauth, Max and Eberhardt, Felix and Polze, Andreas and Lehmann, Jens and Sejdiu, Gezim and Jabeen, Hajira and Servadei, Lorenzo and M{\"o}stl, Christian and B{\"a}r, Florian and Netzeband, Andr{\´e} and Schmidt, Rainer and Knigge, Marlene and Hecht, Sonja and Prifti, Loina and Krcmar, Helmut and Sapegin, Andrey and Jaeger, David and Cheng, Feng and Meinel, Christoph and Friedrich, Tobias and Rothenberger, Ralf and Sutton, Andrew M. and Sidorova, Julia A. and Lundberg, Lars and Rosander, Oliver and Sk{\"o}ld, Lars and Di Varano, Igor and van der Walt, Est{\´e}e and Eloff, Jan H. P. and Fabian, Benjamin and Baumann, Annika and Ermakova, Tatiana and Kelkel, Stefan and Choudhary, Yash and Cooray, Thilini and Rodr{\´i}guez, Jorge and Medina-P{\´e}rez, Miguel Angel and Trejo, Luis A. and Barrera-Animas, Ari Yair and Monroy-Borja, Ra{\´u}l and L{\´o}pez-Cuevas, Armando and Ram{\´i}rez-M{\´a}rquez, Jos{\´e} Emmanuel and Grohmann, Maria and Niederleithinger, Ernst and Podapati, Sasidhar and Schmidt, Christopher and Huegle, Johannes and de Oliveira, Roberto C. L. and Soares, F{\´a}bio Mendes and van Hoorn, Andr{\´e} and Neumer, Tamas and Willnecker, Felix and Wilhelm, Mathias and Kuster, Bernhard},
  title     = {HPI Future SOC Lab - Proceedings 2017},
  number    = {130},
  editor    = {Meinel, Christoph and Polze, Andreas and Beins, Karsten and Strotmann, Rolf and Seibold, Ulrich and R{\"o}dszus, Kurt and M{\"u}ller, J{\"u}rgen},
  publisher = {Universit{\"a}tsverlag Potsdam},
  address   = {Potsdam},
  isbn      = {978-3-86956-475-3},
  issn      = {1613-5652},
  doi       = {10.25932/publishup-43310},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-433100},
  publisher      = {Universit{\"a}t Potsdam},
  pages     = {ix, 235},
  year      = {2020},
  abstract  = {The "HPI Future SOC Lab" is a cooperation of the Hasso Plattner Institute (HPI) and industry partners. Its mission is to enable and promote exchange and interaction between the research community and the industry partners. The HPI Future SOC Lab provides researchers with free of charge access to a complete infrastructure of state of the art hard and software. This infrastructure includes components, which might be too expensive for an ordinary research environment, such as servers with up to 64 cores and 2 TB main memory. The offerings address researchers particularly from but not limited to the areas of computer science and business information systems. Main areas of research include cloud computing, parallelization, and In-Memory technologies. This technical report presents results of research projects executed in 2017. Selected projects have presented their results on April 25th and November 15th 2017 at the Future SOC Lab Day events.},
  language  = {en}
}
@misc{KirchartzMarquezStolterfohtetal.2020,
  author    = {Kirchartz, Thomas and M{\´a}rquez, Jos{\´e} A. and Stolterfoht, Martin and Unold, Thomas},
  title     = {Photoluminescence-based characterization of halide perovskites for photovoltaics},
  series = {Zweitver{\"o}ffentlichungen der Universit{\"a}t Potsdam : Mathematisch-Naturwissenschaftliche Reihe},
  journal   = {Zweitver{\"o}ffentlichungen der Universit{\"a}t Potsdam : Mathematisch-Naturwissenschaftliche Reihe},
  number    = {26},
  issn      = {1866-8372},
  doi       = {10.25932/publishup-51970},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-519702},
  pages     = {23},
  year      = {2020},
  abstract  = {Photoluminescence spectroscopy is a widely applied characterization technique for semiconductor materials in general and halide perovskite solar cell materials in particular. It can give direct information on the recombination kinetics and processes as well as the internal electrochemical potential of free charge carriers in single semiconductor layers, layer stacks with transport layers, and complete solar cells. The correct evaluation and interpretation of photoluminescence requires the consideration of proper excitation conditions, calibration and application of the appropriate approximations to the rather complex theory, which includes radiative recombination, non-radiative recombination, interface recombination, charge transfer, and photon recycling. In this article, an overview is given of the theory and application to specific halide perovskite compositions, illustrating the variables that should be considered when applying photoluminescence analysis in these materials.},
  language  = {en}
}
@article{KirchartzMarquezStolterfohtetal.2020,
  author    = {Kirchartz, Thomas and M{\´a}rquez, Jos{\´e} A. and Stolterfoht, Martin and Unold, Thomas},
  title     = {Photoluminescence-based characterization of halide perovskites for photovoltaics},
  series = {Advanced Energy Materials},
  volume    = {10},
  journal   = {Advanced Energy Materials},
  number    = {26},
  publisher = {Wiley},
  address   = {Weinheim},
  issn      = {1614-6832},
  doi       = {10.1002/aenm.201904134},
  pages     = {1 -- 21},
  year      = {2020},
  abstract  = {Photoluminescence spectroscopy is a widely applied characterization technique for semiconductor materials in general and halide perovskite solar cell materials in particular. It can give direct information on the recombination kinetics and processes as well as the internal electrochemical potential of free charge carriers in single semiconductor layers, layer stacks with transport layers, and complete solar cells. The correct evaluation and interpretation of photoluminescence requires the consideration of proper excitation conditions, calibration and application of the appropriate approximations to the rather complex theory, which includes radiative recombination, non-radiative recombination, interface recombination, charge transfer, and photon recycling. In this article, an overview is given of the theory and application to specific halide perovskite compositions, illustrating the variables that should be considered when applying photoluminescence analysis in these materials.},
  language  = {en}
}
@article{KegelmannTockhornWolffetal.2019,
  author    = {Kegelmann, Lukas and Tockhorn, Philipp and Wolff, Christian Michael and M{\´a}rquez, Jos{\´e} A. and Caicedo D{\´a}vila, Sebasti{\´a}n and Korte, Lars and Unold, Thomas and Loevenich, Wilfried and Neher, Dieter and Rech, Bernd and Albrecht, Steve},
  title     = {Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells},
  series = {ACS applied materials \& interfaces},
  volume    = {11},
  journal   = {ACS applied materials \& interfaces},
  number    = {9},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1944-8244},
  doi       = {10.1021/acsami.9b01332},
  pages     = {9172 -- 9181},
  year      = {2019},
  abstract  = {Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22\%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7\% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.},
  language  = {en}
}
@article{StolterfohtCaprioglioWolffetal.2019,
  author    = {Stolterfoht, Martin and Caprioglio, Pietro and Wolff, Christian Michael and Marquez, Jose A. and Nordmann, Joleik and Zhang, Shanshan and Rothhardt, Daniel and H{\"o}rmann, Ulrich and Amir, Yohai and Redinger, Alex and Kegelmann, Lukas and Zu, Fengshuo and Albrecht, Steve and Koch, Norbert and Kirchartz, Thomas and Saliba, Michael and Unold, Thomas and Neher, Dieter},
  title     = {The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells},
  series = {Energy \& environmental science},
  volume    = {12},
  journal   = {Energy \& environmental science},
  number    = {9},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {1754-5692},
  doi       = {10.1039/c9ee02020a},
  pages     = {2778 -- 2788},
  year      = {2019},
  abstract  = {Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V-OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the photoluminescence yield of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination currents in pin- and nip-type cells including high efficiency devices (21.4\%). Our study comprises a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V-OC by inducing an additional non-radiative recombination current that is in most cases substantially larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V-OC of the device. Importantly, the V-OC equals the internal quasi-Fermi level splitting (QFLS) in the absorber layer only in high efficiency cells, while in poor performing devices, the V-OC is substantially lower than the QFLS. Using ultraviolet photoelectron spectroscopy and differential charging capacitance experiments we show that this is due to an energy level mis-alignment at the p-interface. The findings are corroborated by rigorous device simulations which outline important considerations to maximize the V-OC. This work highlights that the challenge to suppress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in proper energy level alignment and in suppression of defect recombination at the interfaces.},
  language  = {en}
}
@article{StolterfohtWolffMarquezetal.2018,
  author    = {Stolterfoht, Martin and Wolff, Christian Michael and Marquez, Jose A. and Zhang, Shanshan and Hages, Charles J. and Rothhardt, Daniel and Albrecht, Steve and Burn, Paul L. and Meredith, Paul and Unold, Thomas and Neher, Dieter},
  title     = {Visualization and suppression of interfacial recombination for high-efficiency large-area pin perovskite solar cells},
  series = {Nature Energy},
  volume    = {3},
  journal   = {Nature Energy},
  number    = {10},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2058-7546},
  doi       = {10.1038/s41560-018-0219-8},
  pages     = {847 -- 854},
  year      = {2018},
  abstract  = {The performance of perovskite solar cells is predominantly limited by non-radiative recombination, either through trap-assisted recombination in the absorber layer or via minority carrier recombination at the perovskite/transport layer interfaces. Here, we use transient and absolute photoluminescence imaging to visualize all non-radiative recombination pathways in planar pintype perovskite solar cells with undoped organic charge transport layers. We find significant quasi-Fermi-level splitting losses (135 meV) in the perovskite bulk, whereas interfacial recombination results in an additional free energy loss of 80 meV at each individual interface, which limits the open-circuit voltage (V-oc) of the complete cell to similar to 1.12 V. Inserting ultrathin interlayers between the perovskite and transport layers leads to a substantial reduction of these interfacial losses at both the p and n contacts. Using this knowledge and approach, we demonstrate reproducible dopant-free 1 cm(2) perovskite solar cells surpassing 20\% efficiency (19.83\% certified) with stabilized power output, a high V-oc (1.17 V) and record fill factor (>81\%).},
  language  = {en}
}
@article{CaprioglioZuWolffetal.2019,
  author    = {Caprioglio, Pietro and Zu, Fengshuo and Wolff, Christian Michael and Prieto, Jose A. Marquez and Stolterfoht, Martin and Becker, Pascal and Koch, Norbert and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {High open circuit voltages in pin-type perovskite solar cells through strontium addition},
  series = {Sustainable Energy \& Fuels},
  volume    = {3},
  journal   = {Sustainable Energy \& Fuels},
  number    = {2},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {2398-4902},
  doi       = {10.1039/c8se00509e},
  pages     = {550 -- 563},
  year      = {2019},
  abstract  = {The incorporation of even small amounts of strontium (Sr) into lead-base hybrid quadruple cation perovskite solar cells results in a systematic increase of the open circuit voltage (V-oc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C-60 electron-transporting layer. The resulting solar cells exhibited a V-oc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, reducing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3\%. Our results demonstrate very high V-oc values and efficiencies in Sr-containing quadruple cation perovskite pin-type solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.},
  language  = {en}
}