@article{CrovettoHempelRusuetal.2020,
  author    = {Crovetto, Andrea and Hempel, Hannes and Rusu, Marin and Choubrac, Leo and Kojda, Sandrino Danny and Habicht, Klaus and Unold, Thomas},
  title     = {Water adsorption enhances electrical conductivity in transparent p-type CuI},
  series = {ACS applied materials \& interfaces},
  volume    = {12},
  journal   = {ACS applied materials \& interfaces},
  number    = {43},
  publisher = {American Chemical Society},
  address   = {Washington, DC},
  issn      = {1944-8244},
  doi       = {10.1021/acsami.0c11040},
  pages     = {48741 -- 48747},
  year      = {2020},
  abstract  = {CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a 2-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 h, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. On the basis of the large intragrain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.},
  language  = {en}
}
@article{PenaCamargoThiesbrummelHempeletal.2022,
  author    = {Pena-Camargo, Francisco and Thiesbrummel, Jarla and Hempel, Hannes and Musiienko, Artem and Le Corre, Vincent M. and Diekmann, Jonas and Warby, Jonathan and Unold, Thomas and Lang, Felix and Neher, Dieter and Stolterfoht, Martin},
  title     = {Revealing the doping density in perovskite solar cells and its impact on device performance},
  series = {Applied physics reviews},
  volume    = {9},
  journal   = {Applied physics reviews},
  number    = {2},
  publisher = {AIP Publishing},
  address   = {Melville},
  issn      = {1931-9401},
  doi       = {10.1063/5.0085286},
  pages     = {11},
  year      = {2022},
  abstract  = {Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterization techniques, comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the electrode charge per cell volume under short-circuit conditions ( CUbi/eV), which amounts to roughly 10(16) cm(-3). This figure of merit represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results consistently demonstrate that the doping density is below this critical threshold 10(12) cm(-3), which means << CUbi / e V) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations, which confirm that the device performance is not affected by such low doping densities.},
  language  = {en}
}
@article{WarbyZuZeiskeetal.2022,
  author    = {Warby, Jonathan and Zu, Fengshuo and Zeiske, Stefan and Gutierrez-Partida, Emilio and Frohloff, Lennart and Kahmann, Simon and Frohna, Kyle and Mosconi, Edoardo and Radicchi, Eros and Lang, Felix and Shah, Sahil and Pena-Camargo, Francisco and Hempel, Hannes and Unold, Thomas and Koch, Norbert and Armin, Ardalan and De Angelis, Filippo and Stranks, Samuel D. and Neher, Dieter and Stolterfoht, Martin},
  title     = {Understanding performance limiting interfacial recombination in pin Perovskite solar cells},
  series = {Advanced energy materials},
  volume    = {12},
  journal   = {Advanced energy materials},
  number    = {12},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1614-6832},
  doi       = {10.1002/aenm.202103567},
  pages     = {10},
  year      = {2022},
  abstract  = {Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto-electronic properties and their successful integration into multijunction cells. However, the performance of single- and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C-60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first-principle numerical simulations. It is found that the most significant contribution to the total C-60-induced recombination loss occurs within the first monolayer of C-60, rather than in the bulk of C-60 or at the perovskite surface. The experiments show that the C-60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C-60, the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells.},
  language  = {en}
}