TY  - JOUR
A1  - Ristic, Goran S.
A1  - Ilic, Stefan D.
A1  - Andjelkovic, Marko S.
A1  - Duane, Russell
A1  - Palma, Alberto J.
A1  - Lalena, Antonio M.
A1  - Krstić, Miloš
A1  - Jaksic, Aleksandar B.
T1  - Sensitivity and fading of irradiated RADFETs with different gate voltages
T2  - Nuclear Instruments and Methods in Physics Research Section A
N2  - The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. 
A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. 
The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. 

The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. 

A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
KW  - pMOS radiation dosimeter
KW  - RADFETs
KW  - irradiation
KW  - sensitivity
KW  - annealing
KW  - fading
Y1  - 2022
UR  - https://publishup.uni-potsdam.de/frontdoor/index/index/docId/64044
SN  - 0168-9002
SN  - 1872-9576
VL  - 1029
PB  - Elsevier
CY  - Amsterdam
ER  -