TY  - JOUR
A1  - Miedema, P. S.
A1  - Beye, Martin
A1  - Koennecke, R.
A1  - Schiwietz, G.
A1  - Föhlisch, Alexander
T1  - The angular- and crystal-momentum transfer through electron-phonon coupling in silicon and silicon-carbide: similarities and differences
T2  - New journal of physics : the open-access journal for physics
N2  - Electron-phonon scattering has been studied for silicon carbide (6H-SiC) with resonant inelastic x-ray scattering at the silicon 2p edge. The observed electron-phonon scattering yields a crystal momentum transfer rate per average phonon in 6H-SiC of 1.8 fs(-1) while it is 0.2 fs(-1) in crystalline silicon. The angular momentum transfer rate per average phonon for 6H-SiC is 0.1 fs(-1), which is much higher than 0.0035 fs(-1) obtained for crystalline silicon in a previous study. The higher electron-phonon scattering rates in 6H-SiC are a result of the larger electron localization at the silicon atoms in 6H-SiC as compared to crystalline silicon. While delocalized valence electrons can screen effectively (part of) the electron-phonon interaction, this effect is suppressed for 6H-SiC in comparison to crystalline silicon. Smaller contributions to the difference in electron-phonon scattering rates between 6H-SiC and silicon arise from the lower atomic mass of carbon versus silicon and the difference in local symmetry.
KW  - electron-phonon scattering
KW  - 6H-SiC
KW  - RIXS
Y1  - 2014
UR  - https://publishup.uni-potsdam.de/frontdoor/index/index/docId/37541
SN  - 1367-2630
VL  - 16
PB  - IOP Publ. Ltd.
CY  - Bristol
ER  -