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Synthesis of fluorinated poly(phenylquinoxaline-amide)s and study of thin films made therefrom

  • A series of five fluorinated poly(phenylquinoxaline-amide)s were synthesized by a polycondensation reaction of a diacid chloride containing the hexafluoroisopropylidene (6F) group, namely 2,2-bis(p-chlorocarbonylphenyl)- hexafluoropropane, with various aromatic diamines incorporating two phenyl-substituted quinoxaline rings. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolione (NMP), dimethylformamide (DMF), and tetrahydrofurane (THF), and showed a high thermal stability with decomposition temperatures above 400 °C and glass transition temperatures in the range of 260-290 Tg. Polymer solutions in NMP were processed into free-standing films that showed low dielectric constant values, in the range of 3.4-3.9, and good mechanical properties, with tensile strength in the range of 40-80 MPa and elongation to break in the range of 22-55%. Very thin films, in the range of tens of nanometer, which were deposited onto silicon wafers exhibited very smooth surfaces, free of pinholes when studied by atomic forceA series of five fluorinated poly(phenylquinoxaline-amide)s were synthesized by a polycondensation reaction of a diacid chloride containing the hexafluoroisopropylidene (6F) group, namely 2,2-bis(p-chlorocarbonylphenyl)- hexafluoropropane, with various aromatic diamines incorporating two phenyl-substituted quinoxaline rings. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolione (NMP), dimethylformamide (DMF), and tetrahydrofurane (THF), and showed a high thermal stability with decomposition temperatures above 400 °C and glass transition temperatures in the range of 260-290 Tg. Polymer solutions in NMP were processed into free-standing films that showed low dielectric constant values, in the range of 3.4-3.9, and good mechanical properties, with tensile strength in the range of 40-80 MPa and elongation to break in the range of 22-55%. Very thin films, in the range of tens of nanometer, which were deposited onto silicon wafers exhibited very smooth surfaces, free of pinholes when studied by atomic force microscopy (AFM).show moreshow less

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Metadaten
Author:Maria Bruma, Elena Hamciuc, Burkhard SchulzORCiDGND, Thomas Köpnick, Burkhard Stiller, Frank W. Mercer
Document Type:Article
Language:English
Year of first Publication:1999
Year of Completion:1999
Release Date:2017/03/24
Source:Polymer. - 40 (1999), S. 6865 - 6871
Organizational units:Zentrale und wissenschaftliche Einrichtungen / Interdisziplinäres Zentrum für Dünne Organische und Biochemische Schichten