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p-Type Doping of Poly(3-hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)borane

  • State-of-the-art p-type doping of organic semiconductors is usually achieved by employing strong -electron acceptors, a prominent example being tetrafluorotetracyanoquinodimethane (F(4)TCNQ). Here, doping of the semiconducting model polymer poly(3-hexylthiophene), P3HT, using the strong Lewis acid tris(pentafluorophenyl)borane (BCF) as a dopant, is investigated by admittance, conductivity, and electron paramagnetic resonance measurements. The electrical characteristics of BCF- and F(4)TCNQ-doped P3HT layers are shown to be very similar in terms of the mobile hole density and the doping efficiency. Roughly 18% of the employed dopants create mobile holes in either F-4 TCNQ- or BCF-doped P3HT, while the majority of doping-induced holes remain strongly Coulomb-bound to the dopant anions. Despite similar hole densities, conductivity and hole mobility are higher in BCF-doped P3HT layers than in F(4)TCNQ-doped samples. This and the good solubility in many organic solvents render BCF very useful for p-type doping of organic semiconductors.

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Metadaten
Author:Patrick Pingel, Malavika Arvind, Lisa Kölln, Robert Steyrleuthner, Felix Kraffert, Jan Behrends, Silvia Janietz, Dieter NeherORCiDGND
DOI:https://doi.org/10.1002/aelm.201600204
ISSN:2199-160X
Parent Title (English):Advanced electronic materials
Publisher:Wiley-Blackwell
Place of publication:Hoboken
Document Type:Article
Language:English
Year of first Publication:2016
Year of Completion:2016
Release Date:2020/03/22
Tag:charge carrier transport; charge transfer; conductivity; molecular doping; organic semiconductors
Volume:2
Pagenumber:7
Funder:DFG [SPP 1601]
Organizational units:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie
Peer Review:Referiert