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Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)

  • Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F(4)TCNQ. We find that the hole density increases linearly with the F(4)TCNQ concentration. Furthermore, the hole mobility is decreased upon doping at low-to-medium doping level, which is rationalized by an analytic model of carrier mobility in doped organic semiconductors [V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bassler, Phys. Rev. B 72, 235202 (2005)]. We infer that the presence of ionized F(4)TCNQ molecules in the P3HT layer increases energetic disorder, which diminishes the carrier mobility.

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Metadaten
Author:P. Pingel, R. Schwarzl, Dieter NeherORCiDGND
DOI:https://doi.org/10.1063/1.3701729
ISSN:0003-6951 (print)
Parent Title (English):Applied physics letters
Publisher:American Institute of Physics
Place of publication:Melville
Document Type:Article
Language:English
Year of first Publication:2012
Year of Completion:2012
Release Date:2017/03/26
Volume:100
Issue:14
Pagenumber:3
Funder:Bundesministerium fur Bildung und Forschung (BMBF) [FKZ 13N10622]
Organizational units:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie
Peer Review:Referiert