Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)
- Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F(4)TCNQ. We find that the hole density increases linearly with the F(4)TCNQ concentration. Furthermore, the hole mobility is decreased upon doping at low-to-medium doping level, which is rationalized by an analytic model of carrier mobility in doped organic semiconductors [V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bassler, Phys. Rev. B 72, 235202 (2005)]. We infer that the presence of ionized F(4)TCNQ molecules in the P3HT layer increases energetic disorder, which diminishes the carrier mobility.
| Author details: | P. Pingel, R. Schwarzl, Dieter NeherORCiDGND |
|---|---|
| DOI: | https://doi.org/10.1063/1.3701729 |
| ISSN: | 0003-6951 |
| Title of parent work (English): | Applied physics letters |
| Publisher: | American Institute of Physics |
| Place of publishing: | Melville |
| Publication type: | Article |
| Language: | English |
| Year of first publication: | 2012 |
| Publication year: | 2012 |
| Release date: | 2017/03/26 |
| Volume: | 100 |
| Issue: | 14 |
| Number of pages: | 3 |
| Funding institution: | Bundesministerium fur Bildung und Forschung (BMBF) [FKZ 13N10622] |
| Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
| Peer review: | Referiert |
