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Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors

  • A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials. (C) 2014 AIP Publishing LLC.

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Metadaten
Author:Riccardo Di Pietro, Deepak Venkateshvaran, Andreas Klug, Emil J. W. List-Kratochvil, Antonio Facchetti, Henning Sirringhaus, Dieter NeherORCiDGND
DOI:https://doi.org/10.1063/1.4876057
ISSN:0003-6951 (print)
ISSN:1077-3118 (online)
Parent Title (English):Applied physics letters
Publisher:American Institute of Physics
Place of publication:Melville
Document Type:Article
Language:English
Year of first Publication:2014
Year of Completion:2014
Release Date:2017/03/27
Volume:104
Issue:19
Pagenumber:5
Funder:Deutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Centre HIOS [SFB 951]; Styrian Government [GZ:A3-11.B-36/2010-5]
Organizational units:Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie
Peer Review:Referiert