In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret
- Blending the conjugated polymer poly(3-hexylthiophene) (P3HT) with the insulating electret polystyrene (PS), we show that the threshold voltage V-t of organic field-effect transistors (OFETs) can be easily and reversely tuned by applying a gate bias stress at 130 degrees C. It is proposed that this phenomenon is caused by thermally activated charge injection from P3HT into PS matrix, and that this charge is immobilized within the PS matrix after cooling down to room temperature. Therefore, room-temperature hysteresis-free FETs with desired V-t can be easily achieved. The approach is applied to reversely tune the OFET mode of operation from accumulation to depletion, and to build inverters. (C) 2015 AIP Publishing LLC.
| Author details: | Guanghao Lu, Norbert Koch, Dieter NeherORCiDGND |
|---|---|
| DOI: | https://doi.org/10.1063/1.4928554 |
| ISSN: | 0003-6951 |
| ISSN: | 1077-3118 |
| Title of parent work (English): | Applied physics letters |
| Publisher: | American Institute of Physics |
| Place of publishing: | Melville |
| Publication type: | Article |
| Language: | English |
| Year of first publication: | 2015 |
| Publication year: | 2015 |
| Release date: | 2017/03/27 |
| Volume: | 107 |
| Issue: | 6 |
| Number of pages: | 5 |
| Funding institution: | Alexander von Humboldt-Stiftung; National Natural Science Foundation of China [51473132] |
| Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
| Peer review: | Referiert |
