Lukas Kegelmann, Philipp Tockhorn, Christian Michael Wolff, José A. Márquez, Sebastián Caicedo Dávila, Lars Korte, Thomas Unold, Wilfried Loevenich, Dieter Neher, Bernd Rech, Steve Albrecht
- Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance holeDoped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.…
MetadatenAuthor details: | Lukas KegelmannORCiDGND, Philipp Tockhorn, Christian Michael WolffORCiDGND, José A. MárquezORCiD, Sebastián Caicedo DávilaORCiDGND, Lars KorteORCiD, Thomas UnoldORCiD, Wilfried Loevenich, Dieter NeherORCiDGND, Bernd RechORCiDGND, Steve AlbrechtORCiD |
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DOI: | https://doi.org/10.1021/acsami.9b01332 |
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ISSN: | 1944-8244 |
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ISSN: | 1944-8252 |
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Pubmed ID: | https://pubmed.ncbi.nlm.nih.gov/30741517 |
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Title of parent work (English): | ACS applied materials & interfaces |
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Publisher: | American Chemical Society |
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Place of publishing: | Washington |
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Publication type: | Article |
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Language: | English |
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Date of first publication: | 2019/02/11 |
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Publication year: | 2019 |
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Release date: | 2021/03/17 |
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Tag: | PEDOT; passivation; perovskite solar cell; quasi-Fermi level splitting; recombination; selective contact; spiro-OMeTAD |
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Volume: | 11 |
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Issue: | 9 |
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Number of pages: | 10 |
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First page: | 9172 |
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Last Page: | 9181 |
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Funding institution: | HyPerCell (Hybrid Perovskite Solar Cells) joint Graduate School; German Federal Ministry for Economic Affairs and Energy (BMWi) through the "PersiST" project [0324037C]; Federal Ministry of Education and Research (BMBF)Federal Ministry of Education & Research (BMBF) [03SF0540]; Helmholtz Foundation within the HySPRINT Innovation lab project |
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Organizational units: | Mathematisch-Naturwissenschaftliche Fakultät / Institut für Physik und Astronomie |
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DDC classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
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Peer review: | Referiert |
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