TY  - JOUR
A1  - Zhang, Shanshan
A1  - Hosseini, Seyed Mehrdad
A1  - Gunder, Rene
A1  - Petsiuk, Andrei
A1  - Caprioglio, Pietro
A1  - Wolff, Christian Michael
A1  - Shoaee, Safa
A1  - Meredith, Paul
A1  - Schorr, Susan
A1  - Unold, Thomas
A1  - Burn, Paul L.
A1  - Neher, Dieter
A1  - Stolterfoht, Martin
T1  - The Role of Bulk and Interface Recombination in High-Efficiency Low-Dimensional Perovskite Solar Cells
JF  - Advanced materials
N2  - 2D Ruddlesden-Popper perovskite (RPP) solar cells have excellent environmental stability. However, the power conversion efficiency (PCE) of RPP cells remains inferior to 3D perovskite-based cells. Herein, 2D (CH3(CH2)(3)NH3)(2)(CH3NH3)(n-1)PbnI3n+1 perovskite cells with different numbers of [PbI6](4-) sheets (n = 2-4) are analyzed. Photoluminescence quantum yield (PLQY) measurements show that nonradiative open-circuit voltage (V-OC) losses outweigh radiative losses in materials with n > 2. The n = 3 and n = 4 films exhibit a higher PLQY than the standard 3D methylammonium lead iodide perovskite although this is accompanied by increased interfacial recombination at the top perovskite/C-60 interface. This tradeoff results in a similar PLQY in all devices, including the n = 2 system where the perovskite bulk dominates the recombination properties of the cell. In most cases the quasi-Fermi level splitting matches the device V-OC within 20 meV, which indicates minimal recombination losses at the metal contacts. The results show that poor charge transport rather than exciton dissociation is the primary reason for the reduction in fill factor of the RPP devices. Optimized n = 4 RPP solar cells had PCEs of 13% with significant potential for further improvements.
KW  - 2D perovskites
KW  - interface recombination
KW  - perovskite solar cells
KW  - photoluminescence
KW  - V-OC loss
Y1  - 2019
U6  - https://doi.org/10.1002/adma.201901090
SN  - 0935-9648
SN  - 1521-4095
VL  - 31
IS  - 30
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - JOUR
A1  - Warby, Jonathan
A1  - Zu, Fengshuo
A1  - Zeiske, Stefan
A1  - Gutierrez-Partida, Emilio
A1  - Frohloff, Lennart
A1  - Kahmann, Simon
A1  - Frohna, Kyle
A1  - Mosconi, Edoardo
A1  - Radicchi, Eros
A1  - Lang, Felix
A1  - Shah, Sahil
A1  - Pena-Camargo, Francisco
A1  - Hempel, Hannes
A1  - Unold, Thomas
A1  - Koch, Norbert
A1  - Armin, Ardalan
A1  - De Angelis, Filippo
A1  - Stranks, Samuel D.
A1  - Neher, Dieter
A1  - Stolterfoht, Martin
T1  - Understanding performance limiting interfacial recombination in pin Perovskite solar cells
JF  - Advanced energy materials
N2  - Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto-electronic properties and their successful integration into multijunction cells. However, the performance of single- and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C-60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first-principle numerical simulations. It is found that the most significant contribution to the total C-60-induced recombination loss occurs within the first monolayer of C-60, rather than in the bulk of C-60 or at the perovskite surface. The experiments show that the C-60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C-60, the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells.
KW  - C60
KW  - defects
KW  - interface recombination
KW  - loss mechanisms
KW  - perovskites
KW  - solar cells
Y1  - 2022
U6  - https://doi.org/10.1002/aenm.202103567
SN  - 1614-6832
SN  - 1614-6840
VL  - 12
IS  - 12
PB  - Wiley-VCH
CY  - Weinheim
ER  -