TY  - JOUR
A1  - Zellmeier, M.
A1  - Brenner, Thomas J. K.
A1  - Janietz, Silvia
A1  - Nickel, N. H.
A1  - Rappich, J.
T1  - Polythiophenes as emitter layers for crystalline silicon solar cells
BT  - parasitic absorption, interface passivation, and open circuit voltage
JF  - Journal of applied physics
N2  - We investigated the influence of the emitter (amorphous-Si, a-Si, or polythiophene derivatives: poly(3-hexylthiophene), P3HT, and poly(3-[3,6-dioxaheptyl]-thiophene), P3DOT) and the interface passivation (intrinsic a-Si or SiOX and methyl groups or SiOX) on the c-Si based 1 × 1 cm2 planar hybrid heterojunction solar cell parameters. We observed higher short circuit currents for the P3HT or P3DOT/c-Si solar cells than those obtained for a-Si/c-Si devices, independent of the interface passivation. The obtained VOC of 659 mV for the P3DOT/SiOX/c-Si heterojunction solar cell with hydrophilic 3,6-dioxaheptyl side chains is among the highest reported for c-Si/polythiophene devices. The maximum power conversion efficiency, PCE, was 11% for the P3DOT/SiOX/c-Si heterojunction solar cell. Additionally, our wafer lifetime measurements reveal a field effect passivation in the wafer induced by the polythiophenes when deposited on c-Si.
Y1  - 2018
U6  - https://doi.org/10.1063/1.5006625
SN  - 0021-8979
SN  - 1089-7550
VL  - 123
IS  - 3
PB  - American Institute of Physics
CY  - Melville
ER  -