TY  - JOUR
A1  - Rappich, J.
A1  - Hartig, P.
A1  - Nickel, N. H.
A1  - Sieber, I.
A1  - Schulze, S.
A1  - Dittrich, T.
T1  - Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers
N2  - Ultra thin organic layers of benzene-type molecules are able to passivate Si surfaces. The organic layers were electrochemically deposited on Si surfaces from aqueous solution of diazonium compounds and show a blocking of the charge transfer from Si into the electrolyte after the deposition process. Electron microscopic images reveal a compact and homogeneous organic layer of 4-bromobenzene on the Si. The surface recombination increases only slightly with respect to a well H-passivated Si surface, so that the interface state density is about 10(11) cm(2) or slightly below. Organic layer modified Si surfaces are much longer stable in ambient air than the H-terminated surface as observed by a slower decay of the integrated photoluminescence intensity with time. Thermal desorption measurements show that the organic layer is stable up to about 200 degrees C.
Y1  - 2005
SN  - 0167-9317
ER  -